This paper reports on the large area growth of GaInAsP/InP structures for 1.3 and 1.55 μm
applications in a LP-MOVPE system at 20 mbar, at conditions comparable to those used for …

Layer structures comprising InP and InGaAsP were compared when grown using nitrogen
versus hydrogen as carrier gas. Under nitrogen a remarkable improvement in layer …

In a production-type LP-MOVPE system at a reactor pressure of 20 mbar, Al x Ga 1− x
As/GaAs structures (0< x< 0.7) have been grown on 2 inch wafers. X-ray and low …

The self-aligned selective regrowth of a GalnAsP/lnP BH laser with semi-insulating InP: Fe
by atmospheric-pressure MOVPE is reported. A threshold current of 26 mA and 12mW …

We have studied the capabilities of the growth of quantum well structures in the Ga In
As P material system by metalorganic vapor phase epitaxy (MOVPE) for optical …

The low pressure metalorganic chemical vapor deposition epitaxial growth and
characterization of InP, Ga 0.47 In 0.53 As and Ga x In 1-x As y P 1-y, lattice-matched to InP …

The low pressure MOCVD technique has been successfully used to grow GaInAsP, lattice-
matched to InP, for the complete compositional range between InP (λ= 0.91 μm) and the …

The conditions required for the growth of GaInAsP/InP by organometallic vapor-phase
epitaxy (OMVPE) covering the available bandgap wavelength of 1.3–1.6 µm were obtained …

Low-threshold 1.3 μm GaInAsP/InP lasers grown by atmospheric-pressure MOVPE Page 1
References 1 SNYDER, A. w., and LOVE, JD: 'Optical waveguide theory' (Chapman & Hall …

Low-pressure MOCVD has been used to grow layers of InP, InGaAs, GaInAsP and quantum
well material on planar substrates patterned with silica masks. The thicknesses and, where …