A 26 dBm 39 GHz Power Amplifier with 26.6% PAE for 5G Applications in 28nm bulk CMOS
Continued demand for 5G cellular connectivity in mobile handheld devices, where antenna
real-estate is at a premium, necessitates high output power from individual transmitter …
real-estate is at a premium, necessitates high output power from individual transmitter …
A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology
JC Hung, YT Cheng, JH Tsai… - 2021 IEEE International …, 2021 - ieeexplore.ieee.org
A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-
speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured …
speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured …
A 32-GHz Broadband mm-wave Power Amplifier in 45-nm SOI Technology
C Zhang, G Guo, W He, X Zhu - 2021 14th UK-Europe-China …, 2021 - ieeexplore.ieee.org
This paper presents a broadband millimeterwave (mm-wave) power amplifier (PA) in 45-nm
SOI Technology. Based on the principle of magnetically-coupled resonance (MCR), an …
SOI Technology. Based on the principle of magnetically-coupled resonance (MCR), an …
A 19.1% PAE, 22.4-dBm 53-GHz parallel power combining power amplifier with stacked-FET techniques in 90-nm CMOS
WC Sun, CN Kuo - 2019 IEEE MTT-S International Microwave …, 2019 - ieeexplore.ieee.org
A two-stage fully integrated 53-GHz stacked-FET power amplifier (PA) is implemented in 90-
nm bulk CMOS. The output stage is optimized to achieve high output power while …
nm bulk CMOS. The output stage is optimized to achieve high output power while …
A 160-183 GHz 0.24-W (7.5% PAE) PA and 0.14-W (9.5% PAE) PA, High-Gain, G-band Power Amplifier MMICs in 250-nm InP HBT
Z Griffith, M Urteaga, P Rowell… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
Two high-gain, high power-added-efficiency (PAE) G-band solid-state power amplifier
(SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five …
(SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five …
One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS
S Sadlo, M De Matos, A Cathelin… - 2021 IEEE Radio …, 2021 - ieeexplore.ieee.org
In order to improve amplifiers' power gain for a close to f_max operation, a methodology to
size the embedding of any active two port is described and then applied to the design of a …
size the embedding of any active two port is described and then applied to the design of a …
18 to 37.5 GHz linear and efficient 5G power amplifier with adaptive biasing technique
MMR Esmael, MAY Abdalla - 2021 IEEE MTT-S International …, 2021 - ieeexplore.ieee.org
An efficient linear power amplifier (PA) which uses a new adaptive bias circuit is
implemented in TSMC 28-nm bulk CMOS process targeting 5G wireless communication …
implemented in TSMC 28-nm bulk CMOS process targeting 5G wireless communication …
[HTML][HTML] Broadband millimeter-wave 5G power amplifier design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT
J Mayeda, DYC Lie, J Lopez - Electronics, 2022 - mdpi.com
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of
24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are …
24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are …
A 28-GHz High Linearity and High Efficiency Class-F Power Amplifier in 90-nm CMOS Process for 5G Communications
A 28-GHz Class-F power amplifier fabricated in 90-nm CMOS process for 5G
communications is presented in this paper. This PA is a differential pair topology consisted …
communications is presented in this paper. This PA is a differential pair topology consisted …
A millimeter-wave dual-band class-F power amplifier in 90 nm CMOS
ZJ Huang, ZH Fu, BW Huang, YT Lin… - … on Radio-Frequency …, 2020 - ieeexplore.ieee.org
A 28/38 GHz dual-band class-F power amplifier (PA) using 90-nm CMOS process is
proposed. The efficiency of the two-stage PA is enhanced by the proposed dual-band class …
proposed. The efficiency of the two-stage PA is enhanced by the proposed dual-band class …