The morphology of electrochemically formed mesoporous Ge double-layer and its
transformations during ultra-high-vacuum annealing at 600–700 C are investigated by …

Thick porous silicon (PS) buffer layers are used as sacrificial layers to epitaxially grow
planar and fully relaxed Ge membranes. The single crystal Ge layers have been deposited …

Mesoporous germanium (MP-Ge) has been predicted to play an important role in a wide
range of potential applications. These porous Ge networks are characterized by physical …

We investigate sintering and reorganization of electrochemically etched mesoporous Ge
layers. Sintering in nitrogen, forming gas, or argon atmospheres always yields a reorganized …

We demonstrate reproducible formation of mesoporous germanium layers suitable for solar
energy applications by electrochemical etching in highly concentrated electrolytes. For long …

A large-grained (111)-oriented Ge thin film is achieved on a SiO2 glass substrate using an
Al-induced crystallization (AIC) technique. Low-temperature (350° C) AIC of an amorphous …

Porous germanium films with good adhesion to the substrate were produced by annealing
GeO 2 ceramic films in H 2 atmosphere. The reduction of GeO 2 started at the top of a film …

This paper reports the use of ultrathin free-standing porous alumina membrane (PAM) in
pattern transferring for selective epitaxial growth (SEG) of Ge dots and films on Si. PAM, as a …

An approach to high quality heteroepitaxial Ge growth on Si substrates by MBE has been
studied. In the growth method studied here, the Ge layers were grown by a two-step …

The surface morphology and the structure of porous germanium layers obtained by chemical
etching of n-type single-crystal Ge (111) substrates with their subsequent annealing in …