A 120-GHz bandwidth CMOS distributed power amplifier with multi-drive intra-stack coupling

O El-Aassar, GM Rebeiz - IEEE Microwave and Wireless …, 2020 - ieeexplore.ieee.org
This letter presents a distributed power amplifier (DPA) topology that improves both the
power combining efficiency and the operation bandwidth. Multi-drive intra-stack coupling is …

A cascaded multi-drive stacked-SOI distributed power amplifier with 23.5 dBm peak output power and over 4.5-THz GBW

O El-Aassar, GM Rebeiz - IEEE Transactions on Microwave …, 2020 - ieeexplore.ieee.org
This article presents a cascaded distributed power amplifier (DPA) topology with greater
than 4.5-THz gain-bandwidth (GBW) product. The DPA uses stacking with multi-drive inter …

Efficient 2–16 GHz flat-gain stacked distributed power amplifier in 0.13 μm CMOS using uniform distributed topology

MM Tarar, T Beucher, S Qayyum… - 2017 IEEE MTT-S …, 2017 - ieeexplore.ieee.org
This work presents the design and implementation of a flat-gain, efficient and wideband
stacked distributed power amplifier (SDPA) in 0.13 um CMOS technology. To obtain high …

A 2–22 GHz CMOS distributed power amplifier with combined artificial transmission lines

Y Zhang, K Ma - IEEE Microwave and Wireless Components …, 2017 - ieeexplore.ieee.org
This letter presents a novel compact distributed power amplifier (DPA) implemented in a
0.18-μm CMOS technology. Two three-stage DAs are combined with their input artificial …

Design and Implementation of Wideband Stacked Distributed Power Amplifier in 0.13- CMOS Using Uniform Distributed Topology

MM Tarar, R Negra - IEEE Transactions on Microwave Theory …, 2017 - ieeexplore.ieee.org
This paper presents the design and implementation of efficient and wideband stacked
distributed power amplifiers (SDPAs) in 0.13-μm CMOS technology. To obtain high output …

A wideband triple-stacked CMOS distributed power amplifier using double inductive peaking

J Kim - IEEE Microwave and Wireless Components Letters, 2019 - ieeexplore.ieee.org
A wideband triple-stacked CMOS distributed power amplifier (DPA) is implemented using a
commercial 65-nm CMOS process. To enhance the output power, a triple-stacked field effect …

A DC-to-108-GHz CMOS SOI distributed power amplifier and modulator driver leveraging multi-drive complementary stacked cells

O El-Aassar, GM Rebeiz - IEEE Journal of Solid-State Circuits, 2019 - ieeexplore.ieee.org
This article proposes a complementary distributed power amplifier (DPA) using stacked gain
cells with multiple input driving signals. The stack multi-drive compensates for the increasing …

A compact pMOS stacked-SOI distributed power amplifier with over 100-GHz bandwidth and up to 22-dBm saturated output power

O El-Aassar, GM Rebeiz - IEEE Solid-State Circuits Letters, 2019 - ieeexplore.ieee.org
This letter presents an all-pMOS stacked-SOI distributed power amplifier (DPA) as an
alternative to conventional nMOS for higher reliable operating voltages. The pMOS-DPA …

Robust, efficient distributed power amplifier achieving 96 Gbit/s with 10 dBm average output power and 3.7% PAE in 22-nm FD-SOI

U Çelik, P Reynaert - IEEE Journal of Solid-State Circuits, 2020 - ieeexplore.ieee.org
A pseudo-differential distributed power amplifier (DPA) based on complementary gain
stages is presented for wideband femtocell 5G indoor communications in 22-nm fully …

A 60-GHz dual-mode distributed active transformer power amplifier in 65-nm CMOS

PM Farahabadi, K Moez - … on Very Large Scale Integration (VLSI …, 2015 - ieeexplore.ieee.org
This paper presents a 60-GHz power amplifier (PA) fabricated in a 65-nm CMOS technology.
The proposed PA utilizes a dual-mode amplification circuit topology to achieve a high level …