Indium incorporation and the optical properties of In x Al 1− x N layers (0≤ x≤ 0.45) grown
by metal-organic vapour phase epitaxy have been investigated simultaneously on polar …

Al 1− x In x N layers with an indium content between x= 10.5% and x= 24% were grown by
metal-organic vapor-phase epitaxy and characterized concerning their optical, structural and …

In-rich In x Al 1− x N films (0.47≤ x≤ 1) were grown directly on nitridated (0001) sapphire
substrates without employing a buffer layer by radiofrequency molecular-beam epitaxy. Both …

nm-thick AlInN films with InN molar fractions ranging from 0.114 to 0.197 were grown by
metalorganic chemical vapor deposition on c-plane GaN on sapphire. It was confirmed that …

We report on metalorganic vapor phase epitaxial growth of InAlN layers on (0001) and (11
2) AlN templates at different temperatures (725–800° C). The indium content (8.0–15.2%) of …

Metal organic chemical vapor deposition is used to grow N-polar In-rich InAlN layers directly
on on-and off-axis (misoriented by 4° towards a plane) c-plane sapphire substrates. During …

We report epitaxial growth of a-plane (11 2 0) AlInN layers nearly-lattice-matched to GaN.
Unlike for c-plane oriented epilayers, a-plane Al 1− x In x N cannot be simultaneously lattice …

The structure and optical characteristics of thin (∼ 30 nm) wurtzite AlInN films grown
pseudomorphic on free-standing, c-plane GaN substrates are presented. The Al 1− x In x N …

AlInN layers were directly grown on AlN/α-Al2O3 (0001) epitaxial templates by metalorganic
vapor phase epitaxy. Indium incorporation coefficient was decreased with increasing the …

InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral
composition modulation characterized by 10–12 nm diameter, honeycomb-shaped …