Making use of the photorefractive effect, we have developed a versatile method of imaging
various crystal properties of semi‐insulating compound semiconductors. The magnitude and …

The steady-state and dynamic behavior of absorption and phase gratings in semi-insulating
GaAs and InP have been studied by four-wave mixing. These measurements permit …

The photorefractive effect is of considerable interest for parallel optical processing
operations. Semiconductor materials have received attention because of their potentially fast …

Photoreflectance (PR) spectroscopy proved to be very useful for the characterization of
various semiconductor structures [l to 61. In most cases PR can be considered as a …

The photoreflectance method, ie, a contactless version of optical modulation spectroscopy is
applied to the study of the band structure features of single-crystal semiconductors, their …

Semiconductors as photorefractive materials sensitive to infrared light are among others
advantageous since they have small response times. Typically these time constants are in …

At wavelengths close to the band edge, strong photorefractive gratings using the Franz–
Keldysh electrorefractive effect can be written in semiconductors. Two‐beam‐coupling …

The time responses of the photorefractive effect in semi-insulating InP doped with Fe and
CdTe doped with In are measured. Using microjoule infrared pulses, gratings can be written …

Photoreflectance and electroreflectance spectra of n‑type GaAs are calculated as a function
of the doping level, the field modulation and the broadening energy. As a general result it is …

The sign of the majority photocarriers in semi-insulating iron-doped InP and undoped GaAs
containing EL2 centres illuminated at 1.06? m is unambiguously determined from the …