High-quality GaAs layers with dislocation densities of less than 5× 10 6 cm-2 on Si
substrates have been obtained through a combination of thermal-cycle annealing and …

A low-threshold AlGaAs/GaAs patterned quantum well laser has been fabricated on a V-
grooved GaAs/Si substrate using metal-organic chemical vapor deposition. High-resolution …

The heterointerfaces of single quantum wells and the characteristics of single-quantum-well
lasers on Si substrates grown with Al/sub 0.5/Ga/sub 0.5/As-Al/sub 0.55/Ga/sub 0.45/P …

We report the suppression of< 100> dark-line defect growth in AlGaAs/In x Ga 1-x As
quantum well lasers on Si substrates grown by metalorganic chemical vapor deposition. An …

Data are presented demonstrating continuous (cw) 300 K operation of pn Al" Ga1_xAs-GaAs
quantum well heterostructure lasers grown on Si and fabricated with naturally occurring …

We demonstrate the first room‐temperature low‐threshold continuous‐wave (cw) operation
of Al0. 3Ga0. 7As/GaAs single quantum well (SQW) heterostructure lasers grown by …

We report the room-temperature pulsed operation of AlGaAs/GaAs multi-quantum well
(MQW) laser diodes (LD's) fabricated on Si substrates by metallorganic chemical vapor …

A self-aligned GaAs/GaAIAs tapered laser with a tapered quantum well active region is
described. The laser is grown by low pressure metalorganic chemical vapor deposition in a …

A room-temperature lasing-operation by current injection to Al 0.17 Ga 0.83 Sb/GaSb multi-
quantum well (MQW) lasers grown by molecular beam epitaxy (MBE) is demonstrated. A …

Threshold current as low as 1.2 mA has been achieved in GaAs/AlGaAs quantum well (QW)
laser diodes. The low threshold current reflects the high quality of the QW crystal and the low …