Photoluminescence (PL) mapping was performed at different temperatures on self‐
assembled InAs/InGaAs quantum dots structures created at different InAs QD growth …

Photoluminescence (PL) spectra of InAs/GaAs heteroepitaxial structures with quantum dots
(QDs) have been studied. The structures were grown by submonolayer migration-enhanced …

Spatially-resolved photoluminescence (PL) spectroscopy was performed at different
temperatures on self-assembled InAs quantum dots embedded into MBE-grown In 0.15 Ga …

The band offset parameter Q c≡ ΔE c/ΔE g for both GaAs/AlGaAs, and GaInAs/AlInAs
(lattice matched to InP) was extracted from electron beam electroreflectance interband …

In order to gain information about the band offset in the strained layer InxGa1-xAs/GaAs
system we have investigated photoreflectance (PR) from two single quantum well (SQW) …

Structural and optical properties of InAs quantum dots (QDs) deposited on the surface of a
thick InGaAs metamorphic layer grown on a GaAs substrate have been studied. The density …

We report on the development of InAs/InGaAlAs quantum-dash-in-well structure on InP
substrate for wideband emitter applications. A spectral width as broad as 58 meV observed …

InGaAs/GaAs (111) B quantum well pin structures grown by gas source molecular beam
epitaxy have been investigated with a photoreflectance technique. Using the reduced mass …

We have studied the molecular beam epitaxial growth and characteristics of p-doped InAs
tunnel injection quantum-dash lasers on InP (001) substrates. Significantly improved …

Photoreflectance and photoluminescence studies were performed to characterize InAs
ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors …