Semiconductor stacked structure, semiconductor device and their manufacturing methods; Handotai sekiso kozo, handotai sochi oyobi sorerano seizo hoho
Y Uchida, S Takaya - 1995 - osti.gov
In a stacked structure of GaAs layer formed on a Si substrate, the lattice constants of the
GaAs layer and the Si substrate differ by 7% so as to generate lattice mismatching …
GaAs layer and the Si substrate differ by 7% so as to generate lattice mismatching …
Semiconductor stacked structure, its manufacturing method and the semiconductor device; Handotai sekiso kozo to sono seizo hoho oyobi sore wo mochiita handotai …
Y Uchida - 1995 - osti.gov
In a stacked structure where a GaAs semiconductor layer is formed on a Si substrate, the
lattice constants of the GaAs layer and the Si substrate differ by 4% so as to generate lattice …
lattice constants of the GaAs layer and the Si substrate differ by 4% so as to generate lattice …
Semiconductor structure and method
CH Ko, JH Chen, MJ Huang - US Patent 8,835,242, 2014 - Google Patents
US8835242B2 - Semiconductor structure and method - Google Patents US8835242B2 -
Semiconductor structure and method - Google Patents Semiconductor structure and method …
Semiconductor structure and method - Google Patents Semiconductor structure and method …
Low dislocation density semiconductor device
JB Mooney, A Sher - US Patent 5,068,695, 1991 - Google Patents
(57) ABSTRACT A low dislocation density semiconductor device in cludes a first
semiconductor layer of a III-V or II-VI semiconductor compound and alloying atoms on a non …
semiconductor layer of a III-V or II-VI semiconductor compound and alloying atoms on a non …
Method of making a low dislocation density semiconductor device
JB Mooney, A Sher - US Patent 4,916,088, 1990 - Google Patents
A low dislocation density semiconductor device includes a first semiconductor layer of a III-V
or II-VI semiconductor compound and alloying atoms on a non-metal substrate. The …
or II-VI semiconductor compound and alloying atoms on a non-metal substrate. The …
Semiconductor structure and method
WL Huang, CC Chen, HL Huang, CC Chou… - US Patent …, 2020 - Google Patents
US10868106B2 - Semiconductor structure and method - Google Patents US10868106B2 -
Semiconductor structure and method - Google Patents Semiconductor structure and method …
Semiconductor structure and method - Google Patents Semiconductor structure and method …
Semiconductor structure and method of manufacturing the same
SC Li, IN Chen, TH Chen, YJ Wang… - US Patent App. 17 …, 2022 - Google Patents
(72) Inventors: SHENG-CHAN LI, TAINAN CITY (TW); I-NAN CHEN, TAIPEI CITY (TW); TZU-
HSIANG CHEN, CHANGHUA COUNTY (TW); YU-JEN WANG, KAOHSIUNG CITY (TW); …
HSIANG CHEN, CHANGHUA COUNTY (TW); YU-JEN WANG, KAOHSIUNG CITY (TW); …
Method for manufacturing semiconductor device
KY Lim, CG Koh, SB Kang, U Kwon, HJ Lee… - US Patent …, 2014 - Google Patents
A semiconductor device is formed with a gate pattern formed on a substrate, and a
recrystallized region having a stacking fault defect in the substrate at one side of the gate …
recrystallized region having a stacking fault defect in the substrate at one side of the gate …
Semiconductor structure and method for manufacturing the same
H Zhong, Q Liang, C Zhao - US Patent App. 14/422,053, 2015 - Google Patents
US20150243654A1 - Semiconductor structure and method for manufacturing the same -
Google Patents US20150243654A1 - Semiconductor structure and method for …
Google Patents US20150243654A1 - Semiconductor structure and method for …
Method for making semiconductor device
T Hino, S Taniguchi, S Ito - US Patent 6,036,772, 2000 - Google Patents
US6036772A - Method for making semiconductor device - Google Patents US6036772A -
Method for making semiconductor device - Google Patents Method for making semiconductor …
Method for making semiconductor device - Google Patents Method for making semiconductor …