AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

V Khvostikov, NA Kalyuzhnyy, SA Mintairov… - AIP Conference …, 2014 - oa.upm.es
AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up
to 100 W/cm (2)) radiation were fabricated by LPE and MOCVD techniques. Monochromatic …

Side-input GaAs laser power converters with gradient AlGaAs waveguide

VP Khvostikov, AN Panchak… - IEEE Electron …, 2022 - ieeexplore.ieee.org
Vertical pn junction photovoltaic converters are the subject of this work. In these devices,
light is injected into the semiconductor crystal through a side interface. So the current …

40% efficient sunlight to electricity conversion

MA Green, MJ Keevers, I Thomas… - Progress in …, 2015 - Wiley Online Library
Increasing sunlight conversion efficiency is a key driver for on‐going solar electricity cost
reduction. For photovoltaic conversion, the approach most successful in increasing …

GaAs-based near-field thermophotonic devices: Approaching the idealized case with one-dimensional PN junctions

J Legendre, PO Chapuis - Solar Energy Materials and Solar Cells, 2022 - Elsevier
Thermophotonics (TPX) is a technology close to thermophotovoltaics (TPV), where a heated
light-emitting diode (LED) is used as the active thermal emitter of the system. It allows to tune …

Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier

K Nozaki, S Matsuo, T Fujii, K Takeda, M Ono… - Optica, 2016 - opg.optica.org
The power consumption of a conventional photoreceiver is dominated by that of the electric
amplifier connected to the photodetector (PD). An ultralow-capacitance PD can overcome …

Impact of photon recycling and luminescence coupling in III-V photovoltaic devices

AW Walker, O Höhn, DN Micha… - Physics, Simulation …, 2015 - spiedigitallibrary.org
Single junction photovoltaic devices composed of direct bandgap III-V semiconductors such
as GaAs can exploit the effects of photon recycling to achieve record-high open circuit …

Photonic structure-integrated two-dimensional material optoelectronics

T Wang, YQ Xu - Electronics, 2016 - mdpi.com
The rapid development and unique properties of two-dimensional (2D) materials, such as
graphene, phosphorene and transition metal dichalcogenides enable them to become …

Interband cascade photovoltaic devices

RQ Yang, Z Tian, JF Klem, TD Mishima… - Applied Physics …, 2010 - pubs.aip.org
A photovoltaic (PV) device based on an interband cascade (IC) structure is proposed for
efficiently converting solar and thermal energy to electricity. These IC PV devices employ …

Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array photoanodes

S Hu, CY Chi, KT Fountaine, M Yao… - Energy & …, 2013 - pubs.rsc.org
Periodic arrays of n-GaAs nanowires have been grown by selective-area metal–organic
chemical-vapor deposition on Si and GaAs substrates. The optical absorption characteristics …

Five watt continuous-wave AlGaAs laser diodes

GL Harnagel, DR Scifresl, HH Kung, DF Welch… - Electronics letters, 1986 - infona.pl
Laser diodes producing continuous-wave output power levels up to 5.4 W at room
temperature have been fabricated and tested. These monolithic arrays of 100 to 140 stripes …