A 27 GHz adaptive bias variable gain power amplifier and T/R switch in 22nm FD-SOI CMOS for 5G antenna arrays
C Elgaard, S Andersson, P Caputa… - 2019 IEEE Radio …, 2019 - ieeexplore.ieee.org
A 27 GHz fully integrated, variable gain, two stage Power Amplifier (PA) and a
Transmit/Receive (T/R) switch targeting 5G antenna array systems are presented. The PA …
Transmit/Receive (T/R) switch targeting 5G antenna array systems are presented. The PA …
A 28GHz two-way current combining stacked-FET power amplifier in 22nm FD-SOI
We present a two-way current combining power amplifier (PA) for 28GHz wireless
communication. To boost the saturated output power (P SAT) and maintain a high power …
communication. To boost the saturated output power (P SAT) and maintain a high power …
A 21-39.5 GHz power amplifier for 5G wireless systems in 22 nm FD-SOI CMOS
This paper presents a high-gain broadband power amplifier for 5G wireless systems, which
provides a gain above 10 dB from 21 GHz to 39.5 GHz, and is implemented in a 22 nm FD …
provides a gain above 10 dB from 21 GHz to 39.5 GHz, and is implemented in a 22 nm FD …
One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS
S Sadlo, M De Matos, A Cathelin… - 2021 IEEE Radio …, 2021 - ieeexplore.ieee.org
In order to improve amplifiers' power gain for a close to f_max operation, a methodology to
size the embedding of any active two port is described and then applied to the design of a …
size the embedding of any active two port is described and then applied to the design of a …
A 26GHz 22.2 DBM Variable Gain Power Amplifier in 28NM FD-SOI CMOS for 5G Antenna Arrays
C Elgaard, A Axholt, E Westesson… - 2018 Asia-Pacific …, 2018 - ieeexplore.ieee.org
A 26 GHz power amplifier (PA) targeting millimeter wave 5G mobile systems is presented.
The two stage PA, integrated in a complete transmitter in a 28 nm FD-SOI CMOS process …
The two stage PA, integrated in a complete transmitter in a 28 nm FD-SOI CMOS process …
A 28 GHz and 38 GHz high-gain dual-band power amplifier for 5G wireless systems in 22 nm FD-SOI CMOS
This paper presents a high-gain, dual-band power amplifier for 5G wireless systems, which
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …
A 28GHz self-contained power amplifier for 5G applications in 28nm FD-SOI CMOS
B Moret, V Knopik, E Kerherve - 2017 IEEE 8th Latin American …, 2017 - ieeexplore.ieee.org
This paper presents a 28 GHz CMOS balanced Power Amplifier (PA) with integrated
quadrature hybrid couplers to achieve robust load insensitivity for 5G phased array …
quadrature hybrid couplers to achieve robust load insensitivity for 5G phased array …
A 22nm FD-SOI CMOS 2-way D-band Power Amplifier Achieving PAE of 7.7% at 9.6 dBm OP1dB and 3.1% at 6dB Back-off by Leveraging Adaptive Back-Gate Bias …
This work presents a 2-way 3-stage D-band Power Amplifier (PA) in 22nm FD-SOI
technology. A dynamic 3-stage bias scaling technique is proposed for this PA. It is based on …
technology. A dynamic 3-stage bias scaling technique is proposed for this PA. It is based on …
A 21-dBm 3.7 W/mm² 28.7% PAE 64-GHz power amplifier in 22-nm FD-SOI
This letter presents the design of a 64-GHz power amplifier (PA) in a 22-nm FD-SOI CMOS
technology. Benefiting from optimized pseudodifferential cascode gain cells as well as the …
technology. Benefiting from optimized pseudodifferential cascode gain cells as well as the …
A 130-151 GHz 8-Way Power Amplifier with 16.8-17.5 dBm Psat and 11.7-13.4% PAE Using CMOS 45nm RFSOI
S Li, GM Rebeiz - 2021 IEEE Radio Frequency Integrated …, 2021 - ieeexplore.ieee.org
This paper presents a D-band linear power amplifier (PA) with high gain, high output power
and high efficiency using CMOS 45nm RFSOI process. An 8-way (4-way differential) power …
and high efficiency using CMOS 45nm RFSOI process. An 8-way (4-way differential) power …