Abstract High quality Al x Ga 1-x P/GaP heteroepitaxial layers were grown by a barrel-type
multiwafer metalorganic vapor phase epitaxy system. Fundamental aspects concerning the …

High-quality bulk layers of (Al x Ga 1-x) 0.5 In 0.5 P (x= 0 to 1.0) and (Al x Ga 1-x) 0.5 In 0.5
P/Ga 0.5 In 0.5 P (x= 0.4, 0.7 and 1.0) quantum wells (QWs) have been grown on 2-and 15 …

The growth of GaInP/AlGaAs heterostructures by organometallic vapor phase epitaxy is
reported. It was observed that different GaInP alloy compositions are required to lattice …

The electrical, optical and structural properties of Al 0.5 In 0.5 P and Ga 0.5 In 0.5 P layers
grown on (001) GaAs substrates by gas source molecular beam epitaxy (GSMBE) using …

Abstract Al y Ga x In 1− x− y P layers have been grown by metalorganic vapour phase
epitaxy (MOVPE) at atmospheric pressure using TEI, TMA or TMG sources. X-ray double …

Al x Ga 1− x P (0≤ x≤ 1) epilayers are grown by OMVPE using TBP as a phosphorus
source. GaP epilayers with a specular surface are obtained at growth temperatures higher …

Low pressure organometallic vapor phase epitaxy is used for the growth of Ga x In 1− x P
lattice matched to GaAs and Al y Ga 1− y As buffer layers grown on GaAs substrates …

Abstract The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor
phase epitaxy has been investigated over a range of substrate temperature from 500 C to …

The electrical properties of midgap states in n‐type Al x Ga1− x As grown by the
metalorganic vapor phase epitaxy were investigated by the deep level transient …

A composition distribution of an Al x Ga1− x As epilayer on a V‐grooved substrate grown by
low‐pressure metalorganic vapor phase epitaxy is described. The aluminum (Al) content of …