Porous GaAs was formed by electrochemical etching of n-type GaAs wafers in HF-or HCl-
based solution with different current densities. The porous structure formation has been …

Samples of p-type porous GaAs was obtained by electrochemical anodization of (100)
oriented p-type GaAs. The formation of porous structure has been confirmed by Raman …

A typical porous structure with pores diameters ranging from 10 to 50nm has been obtained
by electrochemical etching of (100) heavily doped p-type GaAs substrate in HF solution …

In this paper, we present the results of structural and room temperature photoluminescence
studies on porous GaAs (π-GaAs) capped with GaAs. The porous structure formation was …

Abstract Photoluminescence (PL), Raman scattering, and carrier transport have been
studied for the first time in porous GaAs prepared on (111) oriented wafers of n-type …

Porous GaAs layers were formed by electrochemical etching of p-type GaAs (100)
substrates in HF solution. A surface characterization has been performed on p-type GaAs …

Porous GaAs was prepared using electrochemical anodization technique of a cristalline
GaAs wafer in hydrofluoridric (HF) acid based-solution at different manufacturing conditions …

In this paper, we present the results of structural and photoluminescence (PL) studies on
porous layers produced on a heavily p-doped (100) GaAs wafer by electrochemical anodic …

Porous GaAs layers have been formed by anodic etching of n+-type GaAs (10.0) substrates
in a HF: C 2 H 5 OH: HCl: H 2 O 2: H 2 O electrolyte. A dramatic impact of etching time on the …

Porous GaAs layers obtained by electrochemical etching were investigated using SEM, TEM
and optical methods. The morphology, chemical composition and photoluminescence of …