Study of growth temperature in gas‐source molecular‐beam epitaxy growth of InGaAs/GaAs quantum well lasers

G Zhang, A Ovtchinnikov, M Pessa - Applied physics letters, 1993 - pubs.aip.org
Strained‐layer InGaAs/GaAs single quantum well lasers were grown by gas‐source
molecular‐beam epitaxy at temperatures between 430 and 610° C. The optimum growth …
被引用次数：6 相关文章 所有 5 个版本

Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers

G Zhang, A Ovtchinnikov, M Pessa - Journal of crystal growth, 1993 - Elsevier
Abstract Strained-layer InGaAs/GaAs single quantum well lasers were grown by gas-source
molecular-beam epitaxy at growth temperatures in a range of 430 to 610° C. The optimum …
被引用次数：6 相关文章 所有 6 个版本

Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealing

N Yamada, G Roos, JS Harris Jr - Applied physics letters, 1991 - pubs.aip.org
A significant reduction in lasing threshold is achieved by rapid thermal annealing (RTA) for
strained InGaAs/GaAs single quantum well lasers grown by molecular beam epitaxy under …
被引用次数：55 相关文章 所有 5 个版本

Effects of rapid thermal annealing on lasing properties of InGaAs/GaAs/GaInP quantum well lasers

G Zhang, J Näppi, A Ovtchinnikov, H Asonen… - Journal of applied …, 1992 - pubs.aip.org
Thermal processing of strained-layer InGaAs/GaAs/GaInP separated conlinement
heterostructure single quantum well lasers, grown by gas-source molecular beam epitaxy, is …
被引用次数：33 相关文章 所有 6 个版本

Uniform MBE growth of 2 inch diameter wafer for GaAs/AlGaAs and InGaAs/AlGaAs quantum well lasers

M Nagai, K Matsumoto, M Morishima, H Horie… - Journal of crystal …, 1993 - Elsevier
Abstract Uniform GaAs/AlGaAs and InGaAs/AlGaAs quantum well lasers have been grown
by molecular beam epitaxy at high temperatures, where the desorption of Ga or In cannot be …
被引用次数：8 相关文章 所有 6 个版本

Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

SD Offsey, WJ Schaff, PJ Tasker, H Ennen… - Applied physics …, 1989 - pubs.aip.org
Strained‐layer Ga0. 7In0. 3As‐AlGaAs‐GaAs graded‐index separate confinement
heterostructure single quantum well lasers have been grown by molecular beam epitaxy …
被引用次数：41 相关文章 所有 7 个版本

Low threshold current InGaAs/GaAs/GaInP lasers grown by gas‐source molecular beam epitaxy

G Zhang, J Näppi, K Vänttinen, H Asonen… - Applied physics …, 1992 - pubs.aip.org
Strained‐layer InGaAs/GaAs/GaInP separate confinement heterostructure single‐quantum
well lasers have been fabricated using gas‐source molecular beam epitaxy. A threshold …
被引用次数：41 相关文章 所有 7 个版本

Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

YQ Wei, SM Wang, XD Wang, QX Zhao… - Journal of crystal …, 2005 - Elsevier
We have systematically studied the growth of highly strained InGaAs quantum wells (QWs)
at low growth temperatures by molecular beam epitaxy (MBE). Photoluminescence (PL) …
被引用次数：11 相关文章 所有 5 个版本

Strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼ 0.98 μm) grown by gas‐source molecular beam epitaxy

G Zhang, A Ovtchinnikov - Applied physics letters, 1993 - pubs.aip.org
We report on the first strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP separate‐
confinement‐heterostructure quantum well lasers emitting at about 0.98 μm. The laser …
被引用次数：62 相关文章 所有 7 个版本

Growth of 1.3 μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy

P Thiagarajan, AA Bernussi, H Temkin… - Applied physics …, 1995 - pubs.aip.org
The optimization of growth conditions for high quality 1.3 μm InAsP/InGaAsP laser structures
by gas source molecular beam epitaxy is reported. Measurements of photoluminescence …
被引用次数：34 相关文章 所有 5 个版本