Abstract Gallium oxide (Ga 2 O 3) is an ultrawide-bandgap semiconductor material that has
gained attention in recent years owing to its potential applications in optoelectronic devices …

Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …

Literatures reports that intrinsic Ga 2 O 3 shows negligible response to UV wavelength
longer than its optical absorption edge. Herein, we demonstrate for the first time the …

The continuous growth in artificial intelligence and high-performance computing has
necessitated the development of efficient optoelectronic artificial synapses crucial for …

Abstract Development of artificial opto‐electronic synaptic devices plays a crucial role for the
practical implementation of energy‐efficient, parallel processing of human brain. In this …

Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …

Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …

A novel polarization‐sensitive artificial optoelectronic synapse based on β‐Ga2O3 single‐
crystal is proposed in this work, featuring reconfigurable anisotropic vision. A series of …

Abstract Gallium oxide (Ga 2 O 3) is an ultrawide bandgap semiconducting material that has
been developed for many advanced technology and engineering applications and has …

Ga2O3 is an emerging wide‐bandgap semiconductor with high deep ultraviolet absorption,
tunable persistent photoconductivity, and excellent stability toward electric fields, making it a …