Spintronic memristors for neuromorphic circuits based on the angular variation of tunnel magnetoresistance

M Mansueto, A Chavent, S Auffret, I Joumard, L Vila… - Nanoscale, 2021 - pubs.rsc.org
In this study, a new type of compact magnetic memristor is demonstrated. It is based on the
variation of the conductivity of a nano-sized magnetic tunnel junction as a function of the …

Chain of magnetic tunnel junctions as a spintronic memristor

E Raymenants, A Vaysset, D Wan, M Manfrini… - Journal of Applied …, 2018 - pubs.aip.org
In the context of neuromorphic computation, spintronic memristors are investigated for their
use as synaptic weights. In this paper, we propose and experimentally demonstrate a …

Linear and symmetric conductance response of magnetic domain wall type spin-memristor for analog neuromorphic computing

T Shibata, T Shinohara, T Ashida, M Ohta… - Applied Physics …, 2020 - iopscience.iop.org
We developed a three-terminal spintronic memristor named spin-memristor for the artificial
synapse of neuromorphic devices. Current-induced domain wall (DW) motion type …

A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy

S Lequeux, J Sampaio, V Cros, K Yakushiji… - Scientific reports, 2016 - nature.com
Memristors are non-volatile nano-resistors which resistance can be tuned by applied
currents or voltages and set to a large number of levels. Thanks to these properties …

Realizing an isotropically coercive magnetic layer for memristive applications by analogy to dry friction

M Mansueto, A Chavent, S Auffret, I Joumard, J Nath… - Physical Review …, 2019 - APS
We investigate the possibility of realizing a spintronic memristive device based on the
dependence of the tunnel conductance on the relative angle between the magnetization of …

Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

X Zhang, W Cai, M Wang, B Pan, K Cao… - Advanced …, 2021 - Wiley Online Library
Spin‐torque memristors are proposed in 2009, and can provide fast, low‐power, and infinite
memristive behavior for neuromorphic computing and large‐density non‐volatile memory …

[PDF][PDF] Spintronic devices for neuromorphic computing

YJ Zhang, Q Zheng, X Zhu, Z Yuan… - Science China (Physics …, 2020 - researchgate.net
In the past decades, significant progress has been achieved in artificial intelligence, which is
now widely applied in image recognition, big data analysis, unmanned vehicle control and …

Multistate magnetic domain wall devices for neuromorphic computing

R Sbiaa - physica status solidi (RRL)–Rapid Research Letters, 2021 - Wiley Online Library
In recent years, neuromorphic computing has been intensively investigated, to take over the
conventional or von Neumann scheme. Herein, the advantages of memristors as neurons …

Spintronic memristor through spin-torque-induced magnetization motion

X Wang, Y Chen, H Xi, H Li… - IEEE electron device …, 2009 - ieeexplore.ieee.org
Existence of spintronic memristor in nanoscale is demonstrated based upon spin-torque-
induced magnetization switching and magnetic-domain-wall motion. Our examples show …

A spin–orbit‐torque memristive device

S Zhang, S Luo, N Xu, Q Zou, M Song… - Advanced Electronic …, 2019 - Wiley Online Library
Memristors, demonstrated by solid‐state devices with continuously tunable resistance, have
emerged as a new paradigm for self‐adaptive networks that require synapse‐like functions …