The magnetic properties of an electron-hole pair bound to complex neutral defects in
semiconductors are discussed and compared to experimental data for both direct-and …

Some recent advances in the understanding of the electronic structure of bond excitons (BE:
s) in semiconductors are discussed, with the emphasis on properties of complex defects or …

The influence of hole localization on the magnetoluminescence emission of a two-
dimensional electron gas present in a semiconductor modulation-doped heterojunction is …

The optical properties and electronic structure of isoelectronic defect bound excitons in
semiconductors have been studied. A simple model is used to describe the electron …

The linear and quadratic Zeeman effect of three different (D 0, X) bound-exciton complexes
in GaP with D 0= S, Se, Te is discussed in this paper. The binding energy of the hole in the …

In this article some recent experimental magneto-optical investigations of neutral
isoelectronic complex defects in semiconductors are reviewed. The discussion is mainly …

In this paper we present the results of an investigation of the radiative recombination of
excitons bound to neutral S, Se, and Te donors in GaP in external magnetic fields of up to …

The magnetic ordering mechanism in the system of free carriers and magnetic
semiconductor impurities is proposed. Cases with the exciton gas generated by optical …

It is shown that high magnetic fields provide an efficient means to distinguish strongly
localized impurity states from shallow, effective-mass-like states, irrespective of the binding …

A theoretical investigation is reported of macroscopic manifestations of spin-selective
trapping of conduction-band electrons by paramagnetic centers with spin S= 4, such as …