Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation
The radiation hardness of GaN-based devices is a critical metric for applications in extreme
environments. This study investigates the structural changes in GaN and AlN induced by …
environments. This study investigates the structural changes in GaN and AlN induced by …
[引用][C] Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations (Small 49/2022)
GaN is a promising radiation-hard semiconductor. In article number 2102235, Miguel C.
Sequeira and co-workers clarify its ion-solid dynamics in the strongly ionizing regime …
Sequeira and co-workers clarify its ion-solid dynamics in the strongly ionizing regime …
Structural and mechanical modifications of GaN thin films by swift heavy ion irradiation
The structural modifications and the evolution of mechanical behavior of gallium nitride
(GaN) thin films irradiated by 92 MeV 129 Xe 23+ at different fluences have been …
(GaN) thin films irradiated by 92 MeV 129 Xe 23+ at different fluences have been …
Unravelling the secrets of the resistance of GaN to strongly ionising radiation
MC Sequeira, JG Mattei, H Vazquez… - Communications …, 2021 - nature.com
GaN is the most promising upgrade to the traditional Si-based radiation-hard technologies.
However, the underlying mechanisms driving its resistance are unclear, especially for …
However, the underlying mechanisms driving its resistance are unclear, especially for …
Defect formation in GaN epitaxial layers due to swift heavy ion irradiation
GaN epitaxial layers were irradiated with 200 MeV Ag ions at various fluences. These
samples were characterized ex situ by resistivity/Hall, XRD, and transmission electron …
samples were characterized ex situ by resistivity/Hall, XRD, and transmission electron …
Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations
The widespread adoption of gGaN in radiation‐hard semiconductor devices relies on a
comprehensive understanding of its response to strongly ionizing radiation. Despite being …
comprehensive understanding of its response to strongly ionizing radiation. Despite being …
Disorder induced in GaN thin films by 200 MeV silver ions
GaN is a material of strategic importance due to its versatility in high temperature, radiation
prone and chemical environments. The present study explores evolution of defects in GaN …
prone and chemical environments. The present study explores evolution of defects in GaN …
Response of GaN to energetic ion irradiation: conditions for ion track formation
M Karlušić, R Kozubek, H Lebius… - Journal Of Physics D …, 2015 - iopscience.iop.org
We investigated the response of wurzite GaN thin films to energetic ion irradiation. Both swift
heavy ions (92 MeV Xe 23+, 23 MeV I 6+) and highly charged ions (100 keV Xe 40+) were …
heavy ions (92 MeV Xe 23+, 23 MeV I 6+) and highly charged ions (100 keV Xe 40+) were …
Ion-beam-induced chemical disorder in GaN
Atomistic structures of high-energy ion irradiated GaN were examined using transmission
electron microscopy (TEM). Single crystalline GaN substrates were irradiated at cryogenic …
electron microscopy (TEM). Single crystalline GaN substrates were irradiated at cryogenic …
Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe20+ ions at room temperature
B Li, H Liu, X Lu, L Kang, Y Sheng, A Xiong - Applied Surface Science, 2019 - Elsevier
The general features in ion-irradiated GaN are identified as basal stacking faults and
dislocation loops. Understanding the atomic configuration of those lattice defects are …
dislocation loops. Understanding the atomic configuration of those lattice defects are …