Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and
scalability advantages over heterogeneous integration. The challenge is that epitaxial …

Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to
obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs …

Quantum dot lasers epitaxially grown on Si are promising for an efficient light source for
silicon photonics. Recently, considerable progress has been made to migrate 1.3 μm …

Photonic integrated circuits (PICs) have enabled numerous high performance, energy
efficient, and compact technologies for optical communications, sensing, and metrology …

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via
direct epitaxial growth is a promising solution for on-chip light sources. Recent …

Reliable, efficient electrically pumped silicon-based lasers would enable full integration of
photonic and electronic circuits, but have previously only been realized by wafer bonding …

Electrically pumped on-chip C-band lasers provide additional flexibility for silicon photonics
in the design of optoelectronic circuits. III–V quantum dots, benefiting from their superior …

Tunable semiconductor lasers are often listed in critical technology road maps for future
dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing …

Laser gain regions using quantum dots have numerous improvements over quantum wells
for photonic integration. Their atom-like density of states gives them unique gain properties …

Heterogeneous integration of III–V semiconductor photonics combined with silicon foundry
technology enables low-cost, high-performance photonic integrated circuits. Highly reliable …