The authors demonstrate the ability of high-quality epitaxial InAs films to be used as
wavelength-flexible, low-loss, engineered plasmonic metals across the mid-infrared spectral …

In this work, the authors demonstrate the potential of epitaxially grown highly doped InSb as
an engineered, wavelength-flexible mid-IR plasmonic material. The authors achieve doping …

We demonstrate the potential of highly-doped semiconductor epilayers as building blocks
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …

Single crystalline Ag films on dielectric substrates have received tremendous attention
recently due to their technological potentials as low loss plasmonic materials. Two different …

We demonstrate lateral control of carrier concentration in doped Si for mid-infrared
plasmonic applications. Using commercially available spin-dopants, we show that doped …

Metal-based plasmonics has a wide range of important applications but is subject to several
drawbacks. In this paper, we propose and investigate an all-semiconductor-based approach …

In the past decade or two, the field of nanophotonics has seen rapid development,
empowered by introducing the concepts of plasmonics and metamaterials. The enabling …

We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic
absorbers and show that absorption in these structures is linked to the excitation of highly …

Plasmonic materials, and their ability to enable strong concentration of optical fields, have
offered a tantalizing foundation for the demonstration of sub-diffraction-limit photonic …

High-quality materials are critical for advances in plasmonics, especially as researchers now
investigate quantum effects at the limit of single surface plasmons or exploit ultraviolet-or …