This paper presents a 29-to-57GHz (65% BW) AM-PM compensated class-AB power
amplifier tailored for 5G phased arrays. Designed in 0.9 V 28nm CMOS without RF thick top …

A wideband amplitude to phase (AM-PM) compensated class-AB power amplifier (PA)
suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm …

This paper presents the first linear bulk CMOS power amplifier (PA) targeting low-power fifth-
generation (5G) mobile user equipment integrated phased array transceivers. The output …

To fulfill the insatiable demand for high data-rates, the millimeter-wave (mmW) 5G
communication standard will extensively use high-order complex-modulation schemes (eg …

Rapidly growing demand for broadband-cellular-data traffic is driving fifth-generation (5G)
wireless standardization towards the deployment of gigabit-per-second mm-Wave …

This paper presents a linear power amplifier (PA) implemented in 28-nm bulk CMOS
process for 5G communication systems with wideband operation in order to cover all …

This paper presents a 28 GHz CMOS balanced Power Amplifier (PA) with integrated
quadrature hybrid couplers to achieve robust load insensitivity for 5G phased array …

Wideband power amplifiers (PAs) with high power-added efficiency (PAE) are required by
software-defined radio and high-data-rate communications. A PA in Class-AB, which can …

In this paper, we present a broadband two-stage cascode-based power amplifier (PA) in 40
nm CMOS technology that covers the ISM band applications at 60 GHz, E-band applications …

This paper presents a high output power, high gain, class-AB power amplifier (PA) in 40 nm
CMOS technology for D-band applications. Two-way transformer-based power-combining is …