Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions

H Kubota, A Fukushima, K Yakushiji, T Nagahama… - Nature Physics, 2008 - nature.com
When an electric current passes from one ferromagnetic layer via a non-magnetic layer into
another ferromagnetic layer, the spin polarization and subsequent rotation of this current can …

Bias and angular dependence of spin-transfer torque in magnetic tunnel junctions

C Wang, YT Cui, JZ Sun, JA Katine, RA Buhrman… - Physical Review B …, 2009 - APS
We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer
torque vector τ in MgO-based magnetic tunnel junctions as a function of the offset angle …

Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

SC Oh, SY Park, A Manchon, M Chshiev, JH Han… - Nature Physics, 2009 - nature.com
Abstract Spin-transfer torque,(STT) allows the electrical control of magnetic states in
nanostructures,,. The STT in magnetic tunnel junctions (MTJs) is of particular importance …

Spin Torque, Tunnel-Current Spin Polarization, and Magnetoresistance<? format?> in MgO Magnetic Tunnel Junctions

GD Fuchs, JA Katine, SI Kiselev, D Mauri, KS Wooley… - Physical Review Letters, 2006 - APS
We employ the spin-torque response of magnetic tunnel junctions with ultrathin MgO tunnel
barrier layers to investigate the relationship between spin transfer and tunnel …

Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities

A Chanthbouala, R Matsumoto, J Grollier, V Cros… - Nature Physics, 2011 - nature.com
Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism,,, is one of
the ways foreseen for the switching of future spintronic memories or registers,. But the …

Measurement of the spin-transfer-torque vector in magnetic tunnel junctions

JC Sankey, YT Cui, JZ Sun, JC Slonczewski… - Nature Physics, 2008 - nature.com
The transfer of spin angular momentum from a spin-polarized current to a ferromagnet can
generate sufficient torque to reorient the magnet's moment. This torque could enable the …

Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices

AM Deac, A Fukushima, H Kubota, H Maehara… - Nature Physics, 2008 - nature.com
Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can
induce steady-state magnetization precession, and has recently been proposed as a …

Back-hopping after spin torque transfer induced magnetization switching in magnetic tunneling junction cells

T Min, JZ Sun, R Beach, D Tang, P Wang - Journal of Applied Physics, 2009 - pubs.aip.org
In some cases such as junctions with low magnetic thermal activation energy, the
magnetization of the free layer in MgO-based magnetic tunnel junctions (MTJs) can back …

High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions

JZ Sun, MC Gaidis, G Hu, EJ O'Sullivan… - Journal of Applied …, 2009 - pubs.aip.org
For Co Fe B∕ Mg O-based magnetic tunnel junctions, the switching probability has an
unusual dependence on bias voltage V and bias magnetic field H for bias voltage pulse …

High spin torque efficiency of magnetic tunnel junctions with MgO/CoFeB/MgO free layer

G Jan, YJ Wang, T Moriyama, YJ Lee, M Lin… - Applied physics …, 2012 - iopscience.iop.org
We present the results of a perpendicular magnetic tunnel junction (MTJ) that displays
simultaneously low critical switching current and voltage, as well as high thermal stability …