The growth behavior of AlGaAs/GaAs/InGaAs structures on non-planar (100) GaAs
substrates has been studied. The structures were grown by atmospheric pressure …

GaAs-based diode lasers for emission wavelengths between 800 nm and 1060 nm with
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …

Low-threshold current (as low as 3.0 mA) and high-external efficiency (approximately= 88%)
InGaAs/GaAs lasers emitting at 1 mu m under a stable fundamental transverse mode were …

A composition distribution of an Al x Ga1− x As epilayer on a V‐grooved substrate grown by
low‐pressure metalorganic vapor phase epitaxy is described. The aluminum (Al) content of …

We have investigated the growth conditions of the InGaAlAs MQW structure. After optimal
growth, ridge-stripe InGaAlAs lasers had a very low threshold current at high temperature …

In this paper we report the performance and study of GaAs AlGaAs (SCH) laser. The
structures were grown by a new variant of the LPE‐technique with temperatures regimes …

Growth and characterization results are presented for high-power laser diodes with AlGaAs
cladding and waveguide layers and strained In 1-x Ga x As quantum wells with 0.09< x< …

The effect of a growth interruption at the interfaces of the AlGaAs/InGaAs/GaAs quantum well
(QW) in the active region of metalorganic vapour phase epitaxy (MOVPE) grown 980 nm …

The detailed observations of selective MOCVD growth of Ga 1− x Al x Al x As on substrates
partly masked by a SiO 2 film were carrie out in the complete range of AlAs fraction x. The …

Abstract The growth of AlGaAs-GaAs double-heterostructure lasers on Si substrates by
metalorganic chemical vapor diposition has been reported by several groups in the past few …