A significant reduction in lasing threshold is achieved by rapid thermal annealing (RTA) for
strained InGaAs/GaAs single quantum well lasers grown by molecular beam epitaxy under …

The high‐power integrity of strained single quantum well InGaAs/AlGaAs lasers grown by
molecular beam epitaxy is investigated. In the high‐power regime, the lifetime of the L z= 7 …

By adjusting the carrier confining structure and the optical confining structure of strained
InGaAs/AlGaAs single quantum well (QW) lasers, an improvement in performance has been …

A study of strained InGaAs quantum wells grown on GaAs by molecular beam epitaxy was
performed in order to optimize the growth conditions for strained-layer single-and multiple …

Thermal processing of strained-layer InGaAs/GaAs/GaInP separated conlinement
heterostructure single quantum well lasers, grown by gas-source molecular beam epitaxy, is …

We report the growth and fabrication of InGaAs/GaAs strained quantum well (QW) lasers
with a very low threshold current density, J th, of< 50 A cm− 2 emitting at 0.98 μm. The …

The performance of a series of In x Ga1− x As/AlGaAs (x= 0.20 and 0.25) strained single
quantum well (SSQW) lasers with lasing wavelengths in the range 930≤ λ≤ 1000 nm is …

The authors report a significant improvement in laser performance in AlInGaAs
multiquantum well lasers using rapid thermal annealing (RTA). They observe that threshold …

We report on the first strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP separate‐
confinement‐heterostructure quantum well lasers emitting at about 0.98 μm. The laser …

The lasing wavelength of a strained-layer InGaAs/GaAs single quantum well laser has been
found to depend strongly on the cavity length. The relationship between the lasing …