Electric force microscopy: gigahertz and nanometer measurement tool

C Böhm - Microelectronic Engineering, 1996 - Elsevier
Following existing trends in microelectronic engineering scanning force microscope test
systems have been developed as a tool for sub micron device characterisation. Performance …

[引用][C] Pulsewidth modulation technique for sampling electrostatic force microscopy

RA Said - Electronics Letters, 1999 - IET
A new sampling electrostatic force microscopy technique for non-invasive measurement of
microelectronic circuits is presented. The technique utilises a pulsewidth modulated …

Finite difference simulation of electric force microscope measurements

U Mueller, S Hofschen, C Boehm, J Sprengepiel… - Microelectronic …, 1996 - Elsevier
A scanning force microscope tester has shown its operational capability in device internal
electrical potentials measurements with both submicron and gigahertz resolution [1]. In this …

High resolution sampling electrostatic force microscopy using pulse width modulation technique

RA Said, SP Cheung, GE Bridges - Journal of Vacuum Science & …, 2000 - pubs.aip.org
This article presents a sampling electrostatic force microscopy technique for high frequency
integrated circuit internal measurement that utilizes a pulse width modulation method. The …

[HTML][HTML] Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

U Gysin, T Glatzel, T Schmölzer… - Beilstein journal of …, 2015 - beilstein-journals.org
Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic
force microscopy (AFM), has reached nanometre dimensions, necessary to investigate …

Electrical characterization of integrated circuits by scanning force microscopy

C Böhm, C Roths, U Müller, A Beyer… - Materials Science and …, 1994 - Elsevier
A new contactless device internal test technique based on a scanning force microscope is
presented, enabling electrical characterization of integrated circuits (ICs) with both high …

Two-dimensional, electrostatic finite element study of tip–substrate interactions in electric force microscopy of high density interconnect structures

TS Gross, CM Prindle, K Chamberlin, N Bin Kamsah… - Ultramicroscopy, 2001 - Elsevier
Two-dimensional electrostatic finite element modeling is used to estimate the variation of tip
force as a function of potential, dielectric film thickness, and tip–substrate spacing when …

[引用][C] Voltage contrast in submicron integrated circuits by scanning force microscopy

C Böhm, J Sprengepiel, M Otterbeck… - Journal of Vacuum …, 1996 - pubs.aip.org
A scanning force microscope can be used to measure a device's internal electrical potential
with high spatial and temporal resolution. We present experimental results taken with a …

Resolution enhancement in probing of high-speed integrated circuits using dynamic electrostatic force-gradient microscopy

Z Weng, T Kaminski, GE Bridges… - Journal of Vacuum …, 2004 - pubs.aip.org
Dynamic mode electrostatic force microscopy is a technique capable of measuring the
internal voltage signals of high-speed integrated circuits. Circuit signals are extracted by …

[PDF][PDF] Application of electrostatic force microscopy in nanosystem diagnostics

TP Gotszalk, P Grabiec, I Rangelow - Materials Science, 2003 - academia.edu
The current state of art of electrostatic force microscopy is described in the paper. The
principle of electrostatic force operation enabling one to analyse local voltage distribution …