Contactless characterization of electronic properties of nanomaterials using dielectric force microscopy

W Lu, J Zhang, YS Li, Q Chen, X Wang… - The Journal of …, 2012 - ACS Publications
Characterization of electronic properties of nanomaterials usually involves fabricating field
effect transistors and deriving materials properties from device performance measurements …

[HTML][HTML] Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

A Axt, IM Hermes, VW Bergmann… - Beilstein journal of …, 2018 - beilstein-journals.org
In this study we investigate the influence of the operation method in Kelvin probe force
microscopy (KPFM) on the measured potential distribution. KPFM is widely used to map the …

Characterization of quantum wells by cross-sectional Kelvin probe force microscopy

O Douheret, S Anand, T Glatzel, K Maknys… - Applied physics …, 2004 - pubs.aip.org
Cross-sectional Kelvin probe force microscopy (KPFM) in ultrahigh vacuum is used to
characterize the electronic structure of InGaAs/InP quantum wells. The KPFM signal shows …

Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopies

SV Kalinin, DA Bonnell, M Freitag… - Applied physics letters, 2002 - pubs.aip.org
Scanning surface potential microscopy (SSPM) is one of the most widely used techniques
for the characterization of electrical properties at small dimensions. Applicability of SSPM …

[图书][B] Conductive atomic force microscopy: applications in nanomaterials

M Lanza - 2017 - books.google.com
The first book to summarize the applications of CAFM as the most important method in the
study of electronic properties of materials and devices at the nanoscale. To provide a global …

Development of in situ optical–electrical MEMS platform for semiconductor characterization

S Cai, C Gu, Y Wei, M Gu, X Pan, P Wang - Ultramicroscopy, 2018 - Elsevier
In situ transmission electron microscopy (TEM) technology has become one of the fastest
growing areas in TEM research in recent years. This technique allows researchers to …

Atomic force microscope laser illumination effects on a sample and its application for transient spectroscopy

GH Buh, JJ Kopanski - Applied physics letters, 2003 - pubs.aip.org
The effect of illumination from the laser of an optical-beam-deflection atomic force
microscope (AFM) on a semiconductor sample is monitored with a (connected in parallel) …

On scanning-electron-microscope conduction-mode signals in bulk semiconductor devices: linear geometry

A Gopinath - Journal of Physics D: Applied Physics, 1970 - iopscience.iop.org
The spatial distribution of scanning microscope conduction-mode signals in bulk specimen,
with bias, is predicted by a one-dimensional theory in linear geometry devices. Micrographs …

Kelvin probe force microscopy for material characterization

T Glatzel, U Gysin, E Meyer - Microscopy, 2022 - academic.oup.com
Kelvin probe force microscopy is a scanning probe method for imaging the surface potential
by atomic force microscopy. The surface potential is one of the most important surface …

From micro-to nanoelectronics: New technology requirements

M Van Rossum - Materials Science and Engineering: B, 1993 - Elsevier
This paper describes new developments in the field of nanostructure fabrication and
characterization. On the processing side, problems in the areas of lithography, patterning …