AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition

DC Bertolet, JK Hsu, KM Lau - Journal of applied physics, 1987 - pubs.aip.org
Single and multiple quantum wells with well widths ranging from 10 to 135 Å were grown by
atmospheric pressure organometallic chemical vapor deposition and characterized by …
被引用次数：35 相关文章 所有 7 个版本

High‐quality single GaAs quantum wells grown by metalorganic chemical vapor deposition

RC Miller, RD Dupuis, PM Petroff - Applied physics letters, 1984 - pubs.aip.org
GaAs-At Gal_x As single and multiquantum well structures grown by metalorganic chemical
vapor deposition have been examined for the first time in detail using low-temperature …
被引用次数：40 相关文章 所有 4 个版本

Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition

RD Dupuis, JG Neff, CJ Pinzone - Journal of crystal growth, 1992 - Elsevier
We report here the low-pressure metalorganic chemical vapor deposition growth of AlGaAs-
GaAs quantum well heterostructures having low-temperature (4.2 K) photoluminescence …
被引用次数：15 相关文章 所有 6 个版本

Influence of substrate temperature on the growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor phase epitaxy

JR Shealy, GW Wicks, H Ohno… - Japanese journal of …, 1983 - iopscience.iop.org
Abstract The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor
phase epitaxy has been investigated over a range of substrate temperature from 500 C to …
被引用次数：8 相关文章 所有 10 个版本

Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wells

DC Bertolet, JK Hsu, KM Lau… - Journal of applied …, 1988 - ui.adsabs.harvard.edu
A study of the low-temperature photoluminescence characteristics of very narrow one-
dimensional quantum-well structures, grown by atmospheric pressure organometallic …
被引用次数：48 相关文章 所有 5 个版本

Growth and characterization of high-quality MOCVD AlGaAs/GaAs single quantum wells

RD Dupuis, RC Miller, PM Petroff - Journal of Crystal Growth, 1984 - Elsevier
Abstract The growth of AlGaAs/GaAs single quantum well (QW) heterostructures by
metalorganic chemical vapor deposition (MOCVD) has been studied by varying the growth …
被引用次数：28 相关文章 所有 3 个版本

Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures

WD Laidig, N Holonyak, JJ Coleman… - Journal of Electronic …, 1982 - Springer
The effects of induced disorder on the layered structure and luminescence properties of Al x
Ga 1-x As quantum-well heterostructures (QWH's) grown at Ts= 750° C by metalorganic …
被引用次数：50 相关文章 所有 6 个版本
[PDF] researchgate.net

Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

H Kawai, K Kaneko, N Watanabe - Journal of applied physics, 1984 - pubs.aip.org
Photoluminescence of Al x Ga1− x As/GaAs (x= 0.54) single quantum wells grown by metal
organic chemical vapor deposition has been investigated at both 75 and 4.2 K …
被引用次数：129 相关文章 所有 7 个版本

Growth of GaAs/AlGaAs quantum well structures using a large-scale MOCVD reactor

S Ochi, N Hayafuji, Y Kajikawa, K Mizuguchi… - Journal of Crystal …, 1986 - Elsevier
GaAs/AlGaAs quantum well structures were grown on 2 inch GaAs (100) substrates by a
large-scale metalorganic chemical vapor deposition (MOCVD) reactor. The cross-sectional …
被引用次数：13 相关文章 所有 4 个版本
[PDF] academia.edu

Effect of the growth parameters on the luminescence properties of high-quality GaAs/AlGaAs multiquantum wells on (1 1 1) A substrates by metal organic vapor phase …

A Sanz-Hervás, S Cho, J Kim, A Majerfeld, C Villar… - Journal of crystal …, 1998 - Elsevier
We report on a study of the growth parameters and their effect on the structural and optical
properties of GaAs/AlGaAs multiquantum well (MQW) structures grown on novel (111) A …
被引用次数：12 相关文章 所有 6 个版本