A combination of GalnP waveguide and AIGaAs cladding layers was used for the fabrication
of GaAs-based laser diodes. The replacement of AIGaAs by GalnP in the region of high …

GaAs-based diode lasers for emission wavelengths between 800 nm and 1060 nm with
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …

The facet degradation of InGaAs/GaAs/AlGaAs ridge waveguide (RW) laser diodes was
suppressed by replacing the AlGaAs waveguide layers with a InGaP lattice matched to …

G. Beister, F. Bugge, G. Erbert, J. Maege, P. Ressel, J. Sebastian, A. Thies and H. Wenzel
3.35" long InGAsiGaAslAlGaAs ridge waveguide lasers emitting at 1020nm showed …

Abstract GaInAsP layers and GaAsP/(Al) GaInP laser diodes (LDs) have been grown on
GaAs substrates by metalorganic chemical vapor deposition. The GaInAsP layer, which is …

Abstract The GaInAsN/GaAs double quantum well lasers have been grown by solid source
molecular beam epitaxy. Room-temperature pulsed operation is demonstrated for a ridge …

Abstract InGaAs/GaAs/AlGaAs laser heterostructures are grown by MOCVD epitaxy on GaAs
substrates. Mesastripe laser diodes with an aperture of 100 μm emitting at a wavelength of …

We report on the growth and characterization of high In-content quaternary Ga/sub 1-
x/In/sub x/As/sub 1-y/N/sub y/(0.78< x< 1, y< 0.02), grown by plasma assisted molecular …

We report on high-power ridge-waveguide GaInP/AlGaInP laser diodes emitting at the
wavelength of 670 nm. These lasers, processed into 40× 1,200 µ m 2 shallow ridge …

High‐power visible laser diodes operating at 630–640 nm have been demonstrated. The
devices have a GaInP/GaAlInP single quantum well, graded‐index separate confinement …