High‐power InGaAs‐GaAs strained quantum well lasers with InGaP cladding layers on p‐type GaAs substrates
YK Sin, H Horikawa, T Kamijoh - Journal of applied physics, 1992 - pubs.aip.org
We report device results from channel guide InGaAs‐GaAs strained quantum well lasers
with In0. 49Ga0. 51P cladding layers (λ L= 980 nm). Channel guide lasers are demonstrated …
with In0. 49Ga0. 51P cladding layers (λ L= 980 nm). Channel guide lasers are demonstrated …
High-power InGaAs-GaAs-InGaP strained quantum well lasers on P-type GaAs substrate
YK Sin, H Horikawa - Japanese journal of applied physics, 1995 - iopscience.iop.org
We report on device results from channel guide InGaAs-GaAs strained quantum well lasers
with InGaP cladding layers. Channel guide lasers are demonstrated with the current …
with InGaP cladding layers. Channel guide lasers are demonstrated with the current …
[PDF][PDF] InGaAs-GaAs-InGaP channel guide strained quantum well lasers with output powers over 300 mW
YK Sin, H Horikawa, K Yamada, T Kamijoh - Electronics Letters, 1992 - researchgate.net
Device results are reported from channel guide InGaAs-GaAs strained quantum well lasers
(I,= 980nm) with In, &a,,, P cladding layers. AR-HR coated channel guide lasers with a pnp …
(I,= 980nm) with In, &a,,, P cladding layers. AR-HR coated channel guide lasers with a pnp …
High power InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers grown by two step MOVPE
YK Sin, H Horikawa, T Kamijoh - Electronics Letters, 1993 - IET
Data are presented on device results from buried heterostructure InGaAs-GaAs strained
quantum well lasers with In0. 49Ga0. 51P cladding layers (λL= 980 nm). AR-HR coated …
quantum well lasers with In0. 49Ga0. 51P cladding layers (λL= 980 nm). AR-HR coated …
Low‐threshold InGaAs strained‐layer quantum well lasers (λ= 0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxy
We report on the InGaAs/GaAs/GaInP strained‐layer quantum well (QW) lasers grown by
chemical beam epitaxy (CBE). The single QW broad‐area layers have a very low threshold …
chemical beam epitaxy (CBE). The single QW broad‐area layers have a very low threshold …
High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate …
YK Sin, H Horikawa, I Matsuyama, T Kamijoh - Electronics Letters, 1992 - IET
Device results from laser diodes with a new current blocking scheme using low temperature
(LT) GaAs grown by MBE at 200° C are reported. The laser structure is grown by metal …
(LT) GaAs grown by MBE at 200° C are reported. The laser structure is grown by metal …
InGaAs/AlGaAs strained quantum well laser with semi‐insulating low temperature GaAs and lateral n‐p‐n current confinement structures grown by molecular beam …
T Takamori, YK Sin, K Watanabe, T Kamijoh - Applied physics letters, 1992 - pubs.aip.org
A combination of a lateral n‐p‐n junction using an amphoteric doping of Si in GaAs and a
semi‐insulating GaAs grown at low temperature is applied for the first time to a novel current …
semi‐insulating GaAs grown at low temperature is applied for the first time to a novel current …
Low threshold 0.98 μm aluminium-free strained-quantum-well InGaAs/InGaAsP/InGaP lasers
CJ Chang-Hasnain, R Bhat, H Leblanc, MA Koza - Electronics Letters, 1993 - IET
Aluminium-free strained-quantum-well In0. 2Ga0. 8As lasers employing novel two-stepped
InGaAsP confinement layers and InGaP cladding layers on a GaAs substrate are …
InGaAsP confinement layers and InGaP cladding layers on a GaAs substrate are …
Low threshold InGaAs strained quantum well laser with lateral npn current blocking structure grown by molecular beam epitaxy
T Takamori, K Watanabe, T Kamijoh - Electronics Letters, 1992 - IET
A sophisticated current confinement structure using the amphoteric nature of MBE grown Si-
doped GaAs and AlGaAs is demonstrated for an index-guided InGaAs strained quantum …
doped GaAs and AlGaAs is demonstrated for an index-guided InGaAs strained quantum …
Strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼ 0.98 μm) grown by gas‐source molecular beam epitaxy
G Zhang, A Ovtchinnikov - Applied physics letters, 1993 - pubs.aip.org
We report on the first strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP separate‐
confinement‐heterostructure quantum well lasers emitting at about 0.98 μm. The laser …
confinement‐heterostructure quantum well lasers emitting at about 0.98 μm. The laser …
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