Tunable semiconductor lasers are often listed in critical technology road maps for future
dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing …

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via
direct epitaxial growth is a promising solution for on-chip light sources. Recent …

Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to
obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs …

We report the first demonstration of direct modulation of InAs/GaAs quantum dot (QD) lasers
grown on on-axis (001) Si substrate. A low threading dislocation density GaAs buffer layer …

A self-assembled quantum dot (QD) gain medium has multiple favorable material properties
over conventional quantum well (QW) structures and bulk materials, including a large …

Laser gain regions using quantum dots have numerous improvements over quantum wells
for photonic integration. Their atom-like density of states gives them unique gain properties …

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and
scalability advantages over heterogeneous integration. The challenge is that epitaxial …

Quantum dot lasers epitaxially grown on Si are promising for an efficient light source for
silicon photonics. Recently, considerable progress has been made to migrate 1.3 μm …

We demonstrate the first quantum dot (QD) laser on a silicon substrate with efficient coupling
of light to a silicon waveguide under the QD gain region. Continuous wave operation up to …

Significant improvements in III–V/Si epitaxy have pushed quantum dots (QDs) to the forefront
of Si photonics. For efficient, scalable, and multifunctional integrated systems to be …