High‐power GaAs/AlGaAs diode lasers grown on a Si substrate by metalorganic chemical vapor deposition
J Connolly, N Dinkel, R Menna, D Gilbert… - Applied physics …, 1988 - pubs.aip.org
High‐power GaAs/AlGaAs double‐heterostructure lasers have been fabricated on Si
substrates using a single‐step metalorganic chemical vapor deposition process. An output …
substrates using a single‐step metalorganic chemical vapor deposition process. An output …
The growth of AlGaAs-GaAs lasers on Si substrates by metalorganic chemical vapor deposition
RD Dupuis, CJ Pinzone - Journal of Crystal Growth, 1988 - Elsevier
Abstract The growth of AlGaAs-GaAs double-heterostructure lasers on Si substrates by
metalorganic chemical vapor diposition has been reported by several groups in the past few …
metalorganic chemical vapor diposition has been reported by several groups in the past few …
Single‐longitudinal‐mode metalorganic chemical‐vapor‐deposition self‐aligned GaAlAs‐GaAs double‐heterostructure lasers
JJ Coleman, PD Dapkus - Applied Physics Letters, 1980 - pubs.aip.org
Single-longitudinal-mode laser operation of GaAIAs-GaAs double heterostructures has been
obtained from a variety of structures including channeled-substrate planar structures, 1-4 …
obtained from a variety of structures including channeled-substrate planar structures, 1-4 …
Room‐temperature operation of Ga (1− x) AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
RD Dupuis, PD Dapkus - Applied Physics Letters, 1977 - pubs.aip.org
Room-temperature pulsed laser operation of Ga (l_x) AlxAs/GaAs double-heterostructure
lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved …
lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved …
AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate
TH Windhorn, GM Metze, BY Tsaur, JCC Fan - Applied physics letters, 1984 - pubs.aip.org
AIGaAs double-heterostructure diode lasers have been fabricated for the first time on a
monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of …
monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of …
Ga1-xAlxAs–GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
RD Dupuis - Japanese Journal of Applied Physics, 1980 - iopscience.iop.org
High-performance room-temperature Ga_, Al, As-GaAs double-heterostructure injection
lasers have been grown by the use of metalorganic and hydride sources. This metalorganic …
lasers have been grown by the use of metalorganic and hydride sources. This metalorganic …
High-power single longitudinal mode operation of inverted channel substrate planar lasers
JJ Yang, CS Hong, J Niesen, L Figueroa - J. Appl. Phys.;(United States), 1985 - osti.gov
A high-power GaAs/GaAlAs double heterostructure laser is developed by using the
metalorganic chemical vapor deposition technique. The laser has an index-guided, inverted …
metalorganic chemical vapor deposition technique. The laser has an index-guided, inverted …
Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition
RD Dupuis, PD Dapkus - Applied Physics Letters, 1977 - pubs.aip.org
Room‐temperature operation of Ga (1− x) Al x As/Ga (1− y) Al y As double‐heterostructure
lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved …
lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved …
Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy
AY Cho, RW Dixon, HC Casey Jr… - Applied Physics Letters, 1976 - pubs.aip.org
The continuous (cw) operation at temperatures as high as 100° C of stripe‐geometry GaAs‐
Al x Ga1− x As double‐heterostructure lasers fabricated by molecular‐beam epitaxial (MBE) …
Al x Ga1− x As double‐heterostructure lasers fabricated by molecular‐beam epitaxial (MBE) …
GaAs surface emitting lasers with circular buried heterostructure grown by metalorganic chemical vapor deposition and two‐dimensional laser array
A metalorganic chemical vapor deposition (MOCVD) was used to grow both double‐
heterostructure wafers and circular buried heterostructures for GaAlAs/GaAs surface emitting …
heterostructure wafers and circular buried heterostructures for GaAlAs/GaAs surface emitting …