Spin dynamics and magnetic field induced polarization of excitons in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment

TS Shamirzaev, J Rautert, DR Yakovlev, J Debus… - Physical Review B, 2017 - APS
The exciton spin dynamics are investigated both experimentally and theoretically in two-
monolayer-thick GaAs/AlAs quantum wells with an indirect band gap and a type-II band …

Intrinsic and magnetic-field-induced linear polarization of excitons in ultrathin indirect-gap type-II GaAs/AlAs quantum wells

TS Shamirzaev, J Rautert, DR Yakovlev, MM Glazov… - Physical Review B, 2019 - APS
The exciton dynamics in transverse magnetic field is investigated both experimentally and
theoretically in two-monolayer-thick GaAs/AlAs quantum wells with an indirect band gap and …

Exciton recombination and spin relaxation in strong magnetic fields in ultrathin (In, Al) As/AlAs quantum wells with indirect band gap and type-I band alignment

TS Shamirzaev, J Rautert, DR Yakovlev, M Bayer - Physical Review B, 2021 - APS
The exciton recombination and spin dynamics are studied in monolayer-thick (In, Al) As/AlAs
quantum wells characterized by an indirect band gap and a type-I band alignment. The …

Dynamics of exciton recombination in strong magnetic fields in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment

TS Shamirzaev, J Debus, DR Yakovlev, MM Glazov… - Physical Review B, 2016 - APS
The exciton recombination dynamics is studied experimentally and theoretically in two-
monolayer-thick GaAs/AlAs quantum wells characterized by an indirect band gap and a type …

Recombination and spin dynamics of excitons in thin (Ga, Al)(Sb, As)/AlAs quantum wells with an indirect band gap and type-I band alignment

TS Shamirzaev, DR Yakovlev, AK Bakarov… - Physical Review B, 2020 - APS
The dynamics of exciton recombination and spin relaxation in thin (Ga, Al)(Sb, As)/AlAs
quantum wells (QWs) with indirect band gap are studied. The band alignment in these QWs …

High magnetic field spin splitting of excitons in asymmetric GaAs quantum wells

J Jadczak, M Kubisa, K Ryczko, L Bryja… - Physical Review B …, 2012 - APS
Low-temperature photoluminescence from high-quality GaAs quantum wells, asymmetrically
doped with carbon, are investigated under high magnetic fields (up to 20 T) directed along …

Exchange interaction of excitons in GaAs heterostructures

E Blackwood, MJ Snelling, RT Harley, SR Andrews… - Physical Review B, 1994 - APS
The circular polarization of cw photoluminescence as a function of applied magnetic field
has been measured at 1.8 K for excitons in a series of GaAs/Al x Ga 1− x As and GaAs/AlAs …

Spin dynamics of carriers in GaAs quantum wells in an external electric field

IY Gerlovin, YK Dolgikh, SA Eliseev, VV Ovsyankin… - Physical review B, 2004 - APS
The effect of external electric bias on the kinetics of circularly polarized photoluminescence
(PL) of the GaAs quantum wells (QWs) is studied experimentally. It is found that a negative …

Determination of interface preference by observation of linear-to-circular polarization conversion under optical orientation of excitons in type-II GaAs/AlAs superlattices

RI Dzhioev, HM Gibbs, EL Ivchenko, G Khitrova… - Physical Review B, 1997 - APS
A comprehensive investigation of exciton optical orientation and alignment in type-II
GaAs/AlAs (001) superlattices in longitudinal and transverse magnetic fields is presented …

Magnetic-field dependence of exciton spin relaxation in GaAs/As quantum wells

RT Harley, MJ Snelling - Physical Review B, 1996 - APS
The magnetic-field dependence of spin relaxation of heavy-hole excitons in GaAs/Al x Ga 1−
x As quantum wells is investigated at low temperatures. The variation of circular polarization …