Ga1-xinxas - inp abrupt heterostructures grown by MOVPE at atmospheric pressure
JP Andre, EP Menu, M Erman, MH Meynadier… - Journal of electronic …, 1986 - Springer
Abstract High quality InP and Ga 1-x In x As layers have been grown on InP substrates using
MOVPE growth at atmospheric pressure. Excellent material quality has been obtained using …
MOVPE growth at atmospheric pressure. Excellent material quality has been obtained using …
MOVPE InGaAs/InP grown directly on GaAs substrates
AG Dentai, CH Joyner, B Tell, JL Zyskind, JW Sulhoff… - Electronics Letters, 1986 - infona.pl
We have demonstrated the feasibility of growth of InP/InGaAs structures directly on GaAs
using atmospheric pressure metal organic vapour phase epitaxy. Growth conditions and the …
using atmospheric pressure metal organic vapour phase epitaxy. Growth conditions and the …
Electrical Characterization of Lattice‐Mismatched InP/In x Ga1− x As/InP Heterostructures and PIN Photodiodes Grown by LP‐MOCVD
D Pogány, F Ducroquet, S Ababou… - Journal of the …, 1993 - iopscience.iop.org
ABSTRACT Lattice-mismatched InP/In06Ga04As/InP heterostructures grown by low
pressure metal organic chemical vapor deposition and PIN photodiodes fabricated on the …
pressure metal organic chemical vapor deposition and PIN photodiodes fabricated on the …
Heterojunction InP/GaInAs phototransistors/bipolar transistors grown by MOVPE
Heterojunction InP/GaInAs phototransistors with base terminals have been fabricated by
atmospheric pressure metal organic vapour phase epitaxy. When operated as bipolar …
atmospheric pressure metal organic vapour phase epitaxy. When operated as bipolar …
Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed pin photodiodes
KW Carey, SY Wang, R Hull, JE Turner, D Oertel… - Journal of Crystal …, 1986 - Elsevier
Organometallic vapor phase epitaxy at atmospheric pressure is used to grow InP/Ga 0.47 In
0.53 As/InP pin photodiode structures designed for high speed operation. Growth of high …
0.53 As/InP pin photodiode structures designed for high speed operation. Growth of high …
Planar InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition
RD Dupuis, JC Campbell… - … Electron Devices Meeting, 1985 - ieeexplore.ieee.org
Planar InGaAs/InP heterostructure photodiodes have been fabricated from structures grown
by atmospheric pressure metalorganic chemical vapor deposition. Diffused pn junction …
by atmospheric pressure metalorganic chemical vapor deposition. Diffused pn junction …
InGaAs/InP p‐i‐n photodiodes grown by chemical beam epitaxy
WT Tsang, JC Campbell - Applied physics letters, 1986 - pubs.aip.org
Two types of mesa-type InGaAs/InP pin photodiodes have been fabricated from wafers
grown by chemical beam epitaxy (CBE):(1) a conventional diffused InGaAs homojunction …
grown by chemical beam epitaxy (CBE):(1) a conventional diffused InGaAs homojunction …
[引用][C] Isoelectronic doping effect in InP grown by metalorganic chemical vapor deposition
Single-crystal InP substrates attract considerable interest lately. Heterostructures based on
the InGaAsP/lnP system are routinely used in the fabrication of light sources and detectors …
the InGaAsP/lnP system are routinely used in the fabrication of light sources and detectors …
Spectroscopic ellipsometry study of the In1‐xGaxAsyP1‐y/InP heterojunctions grown by metalorganic chemical‐vapor deposition
B Drevillon, E Bertran, P Alnot, J Olivier… - Journal of Applied …, 1986 - pubs.aip.org
The dielectric functions of InP, In0. 53Ga0. 47As, and In0. 75Ga0. 25As0. 5P0. 5 epitaxial
layers have been measured using a polarization‐modulation spectroscopic ellipsometer in …
layers have been measured using a polarization‐modulation spectroscopic ellipsometer in …