Quantum simulations of multiple-gate nanowire Schottky-barrier (SB) MOSFETs in the
ballistic transport regime have been performed by self-consistently solving the …

The electronic transport in multiple-gate devices is theoretically investigated at ultimate
cross-section channel limit by modeling ballistic nanowire MOSFET architectures. The …

Nanoscale Schottky barrier MOSFETs (SBFETs) are explored by solving the two-
dimensional Poisson equation self-consistently with a quantum transport equation. The …

The impact of discrete random dopant fluctuations on 10-nm-long high-performance
Schottky-barrier (SB) dopant-segregated (DS) nanowire MOSFETs is investigated through …

The device characteristics of the nanoscale Schottky-barrier tunnel transistor (SBTT) are
investigated by solving the self-consistent two-dimensional Poisson-Schrodinger equations …

Incorporating the source-to-drain tunneling current that is valid in all operating regions, an
analytical compact model is proposed in this paper for cylindrical ballistic gate-all-around n …

A comprehensive physics-based compact model for three-terminal undoped Schottky-barrier
(SB) gate-all-around silicon-nanowire MOSFETs is formulated based on a quasi-2-D surface …

A quantum simulation of silicon nanowire field-effect transistors has been performed in the
frame work of the effective mass theory, where the three-dimensional Poisson equation was …

Nanowire MOSFETs attract attention due to the probable high performance and the
excellent controllability of device current. We present a compact model of ballistic nanowire …

The scaling dependence of electron transport in the double-gated Schottky barrier MOSFET
(DG-SBT) below 10 nm is investigated in the framework of quantum transport theory, using …