[HTML][HTML] Etch mechanism of an Al2O3 hard mask in the Bosch process

M Drost, S Marschmeyer, M Fraschke… - Micro and Nano …, 2022 - Elsevier
The etching of high aspect ratio structures in silicon via the Bosch process is essential in
modern technologies such as microelectromechanical systems (MEMS) and through‑silicon …

[PDF][PDF] Etch mechanism of an Al₂O₃ hard mask in the Bosch process

M Drost, S Marschmeyer, M Fraschke… - Micro and Nano …, 2022 - opus4.kobv.de
The etching of high aspect ratio structures in silicon via the Bosch process is essential in
modern technologies such as microelectromechanical systems (MEMS) and through‑silicon …

Effects of mask material conductivity on lateral undercut etching in silicon nano-pillar fabrication

RK Dey, H Ekinci, B Cui - Journal of Vacuum Science & Technology B, 2020 - pubs.aip.org
High aspect ratio silicon structures have gained significant interest due to their vast
applications. Minimal lateral etch under the mask is essential to achieve such high aspect …

Effect of oxygen plasma cleaning on nonswitching pseudo-Bosch etching of high aspect ratio silicon pillars

F Aydinoglu, A Pan, C Zhu, B Cui - … of Vacuum Science & Technology B, 2020 - pubs.aip.org
In dry plasma silicon etching, it is desired to have a high etching rate, a high etching
selectivity to mask material, a vertical or controllable sidewall profile, and a smooth sidewall …

Innovatively composite hard mask to feature sub-30 nm gate patterning

L Meng, C Li, X He, J Luo, J Li, C Zhao, J Yan - Microelectronic engineering, 2014 - Elsevier
We presented an innovative composite α-Si/SiO 2/Si 3 N 4/SiO 2 (α-Si/ONO) hard mask
etching technology to produce sub-30 nm ultrafine gate patterns. Effects of process …

Deep SiO2 etching with Al and AlN masks for MEMS devices

V Bliznetsov, HM Lin, YJ Zhang… - … of Micromechanics and …, 2015 - iopscience.iop.org
Silicon oxide-based materials such as quartz and silica are widely used in
microelectromechanical systems (MEMS). One way to enhance the capability of their deep …

Ultrahigh aspect ratio etching of silicon in SF6-O2 plasma: The clear-oxidize-remove-etch (CORE) sequence and chromium mask

VTH Nguyen, E Shkondin, F Jensen… - Journal of Vacuum …, 2020 - pubs.aip.org
Getting high aspect ratio (HAR) structures is a frequent request in directional etching of
silicon using mainstream plasma tools. HAR features are useful either directly (eg, photonic …

[HTML][HTML] ScAlN etch mask for highly selective silicon etching

M David Henry, TR Young, B Griffin - Journal of Vacuum Science & …, 2017 - pubs.aip.org
This work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask
offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a …

Low temperature remote plasma cleaning of the fluorocarbon and polymerized residues formed during contact hole dry etching

H Seo, SB Kim, J Song, Y Kim, H Soh… - Journal of Vacuum …, 2002 - pubs.aip.org
We investigated the remote oxygen and hydrogen plasma cleaning to remove reactive ion
etching (RIE) induced fluorocarbon and polymerized residues formed during the dry etching …

[HTML][HTML] Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching

X Zhang, C Yao, J Niu, H Li, C Xie - Micromachines, 2023 - mdpi.com
Silicon structures with ultra-high aspect ratios have great potential applications in the fields
of optoelectronics and biomedicine. However, the slope and increased roughness of the …