The effects of isochronal annealing on the electrical, morphological and structural
characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current …

Thermal annealing effects on electrical characteristics of Ni/4H-SiC and Ti/4H-SiC Schottky
barrier diodes (SBDs) are investigated in the temperature range of 400–1100° C. The …

High-temperature processing was used to improve the barrier properties of three sets of n-
type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum …

Abstract The Ni-based 4H–SiC Schottky barrier diodes (SBDs) with Si intercalation have
been investigated. The electrical properties of SBDs are characterized by temperature …

Abstract Ti/Al/Au ohmic contacts to p-type 4H-SiC in terms of a different annealing time and
Ti composition are reported. At 1050 C, proper increase in annealing time plays a critical …

We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain
Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and …

A metallization scheme suitable to explore the capability of 4H–SiC for high temperature
applications was designed and fabricated on Schottky barrier diodes (SBDs). The device …

Au/Pd/SiC Schottky baffler contacts have been formed on n-type 4H-SiC grown by
sublimation epitaxy. The effect of annealing temperature on the electrical properties of these …

This paper presents an experimental investigation into different metallisation structures
aimed at reducing the contact resistance and morphology of p-type contacts to 4H-SiC. The …

The electrical characteristics of Au/3C-SiC Schottky diodes were studied and related to
crystal defects. A structural analysis performed by transmission electron microscopy (TEM) …