Correlation between optical properties and interface morphology of GaAs∕ AlGaAs quantum wells

N Moret, DY Oberli, E Pelucchi, N Gogneau… - Applied physics …, 2006 - pubs.aip.org
We investigate the embedded interfaces of Ga As∕ Al Ga As quantum wells grown by metal
organic vapor phase epitaxy on slightly (< 1)-misoriented (001) substrates using selective …
被引用次数：16 相关文章 所有 4 个版本

Optics, morphology, and growth kinetics of GaAs/AlGaAs quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy

N Moret, DY Oberli, E Pelucchi, N Gogneau… - Physical Review B …, 2011 - APS
The effect of the miscut angle of vicinal substrate on the optical and morphological
properties of GaAs/Al x Ga 1− x As quantum wells grown by metalorganic vapor phase …
被引用次数：5 相关文章 所有 3 个版本

Modification of the microroughness of molecular‐beam epitaxially grown GaAs/AlAs interfaces through changes in the growth temperature

DS Katzer, D Gammon, BV Shanabrook - Journal of Vacuum Science & …, 1992 - pubs.aip.org
The interfacial properties of a series of GaAs/AlAs quantum wells (QWs) grown by molecular‐
beam epitaxy is examined using photoluminescence (PL). These high‐quality QWs show …
被引用次数：8 相关文章 所有 5 个版本

Interfaces in GaAs/AlAs quantum well structures

D Gammon, BV Shanabrook, DS Katzer - Applied physics letters, 1990 - pubs.aip.org
We present a study of the bottom interface (GaAs on AlAs) in GaAs/AlAs single quantum
wells using reflection high‐energy electron diffraction, luminescence, and luminescence …
被引用次数：78 相关文章 所有 5 个版本

One atomic layer heterointerface fluctuations in GaAs-AlAs quantum well structures and their suppression by insertion of smoothing period in molecular beam epitaxy

H Sakaki, M Tanaka, J Yoshino - Japanese journal of applied …, 1985 - iopscience.iop.org
Abstract Photoluminescence spectra of GaAs-AlAs quantum wells are studied to evaluate
the flatness of heterointerfaces prepared by molecular beam epitaxy. We examine the …
被引用次数：269 相关文章 所有 11 个版本

Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature

T Hayakawa, T Suyama, K Takahashi, M Kondo… - Applied physics …, 1985 - pubs.aip.org
The interface disorder of quantum wells grown by molecular beam epitaxy at high substrate
temperature is investigated by low-temperature photoluminescence. The excitonic emission …
被引用次数：70 相关文章 所有 8 个版本

Interfacial properties of (111) A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy

A Sanz-Hervás, S Cho, A Majerfeld, BW Kim - Applied Physics Letters, 2000 - pubs.aip.org
We present the heterointerfacial properties of GaAs/AlGaAs multiquantum-well structures
grown by atmospheric-pressure metalorganic vapor phase epitaxy on (111) A GaAs …
被引用次数：9 相关文章 所有 3 个版本

Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411) A GaAs substrates by molecular beam epitaxy

S Hiyamizu, S Shimomura, A Wakejima… - Journal of Vacuum …, 1994 - pubs.aip.org
GaAs/AlGaAs quantum wells (QWs) were grown on (411) A‐oriented GaAs substrates by
molecular beam epitaxy (MBE). Photoluminescence linewidths at 4.2 K are almost the same …
被引用次数：60 相关文章 所有 6 个版本

Atomic-scale structures of top and bottom heterointerfaces in GaAs–AlxGa1-xAs (x= 0.2-1) quantum wells prepared by molecular beam epitaxy with growth interruption

M Tanaka, H Sakaki, J Yoshino - Japanese journal of applied …, 1986 - iopscience.iop.org
We have studied microscopic structures of two different interfaces in MBE-grown GaAs–Al x
Ga 1-x As quantum wells (QWs), and effects of growth interruption on the interface …
被引用次数：134 相关文章 所有 8 个版本

Interface structures in GaAsAl (Ga) As quantum wells controlled by metalorganic vapor phase epitaxy and molecular beam epitaxy

N Inoue, K Ikuta, M Shinohara, J Osaka - Journal of crystal growth, 1995 - Elsevier
Quantum wells were grown by metalorganic vapor phase epitaxy (MOVPE) and molecular
beam epitaxy (MBE) with the growth modes of step propagation, 2D nucleation and a …
被引用次数：9 相关文章 所有 6 个版本