Abstract In 0.15 Ga 0.85 N/GaN bilayers irradiated with 2.3 áMeV Ne and 5.3 áMeV Kr ions
at room temperature were studied by high-resolution X-ray diffraction (HRXRD) and micro …

In the present work, the resistivity, mobility and the carrier density at either room temperature
or 77K in 3-μm-thick n-GaN epi-layers irradiated with 290MeV 238U32+ ions were tested …

Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates were irradiated with
5.3 MeV Kr23+ and 2.3 MeV Ne8+ ions to various fluences. The pristine and the irradiated …

Wurtzite GaN epilayers irradiated at room temperature with 308 MeV 129 Xe 35+ ions to
fluences of 1× 10 13 and 3× 10 13 cm− 2 have been studied by contact mode atomic force …

Abstract A monocrystalline In 0.18 Ga 0.82 N film of∼ 275 nm in thickness grown on a
GaN/Al 2 O 3 substrate was irradiated with 290 MeV 238 U 32+ ions to a fluence of 1.2× 10 …

Abstract In 0.18 Ga 0.82 N films were irradiated with 4 MeV 84 Kr and 8.9 MeV 209 Bi ions to
various fluences at room temperature. The irradiated films were analyzed by means of …

GaN epitaxial layers were studied after being exposed to 100 MeV oxygen ions at different
fluences, including 1× 10 11/cm 2, 5× 10 11/cm 2, 1× 10 12/cm 2, 1× 10 13/cm 2, 5× 10 …

Homogeneous radiation damage was induced in∼ 250-nm-thick In0. 18Ga0. 82N and Al0.
2Ga0. 8N films by irradiation with 8.9 MeV Bi33+ ions at room temperature. The ion fluence …

Abstract Wurtzite In x Ga 1− x N (x= 0.32, 0.47, 0.7, 0.8, and 0.9) films grown on the GaN
epilayers were irradiated with 5 MeV Xe ions to fluences of 3× 10 13 and 6× 10 13 cm− 2 at …

Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates are irradiated with
150MeV Ag ions at a fluence of 5× 1012ions/cm2. Samples used in this study are 2μm thick …