In this letter, we proposed a method in which a n-type GaAs wafer was first anodized in HF
for a short time to form a high density of etch pits on its surface and then anodized in KOH …

This paper consists to present first results concerning the structure of porous GaAs layer (por-
GaAs-L) prepared by using HF/HNO 3 as acidic solution in vapor etching (VE) method. In …

In this work, the double cell electrochemical etching technique is employed to study the
evolution of surface morphology during the etching of p-type gallium arsenide (GaAs) in a …

The morphology of porous layers obtained by electrochemical etching of (100) oriented n-
GaAs substrates in an aqueous solution of HCl was studied. At low anodic current densities …

Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-
containing solutions. Crystallographic etching of the sample is a precursor stage of the …

Porous GaAs was formed electrochemically on n-type GaAs in a HF: C₂H₅OH (1: 3)
electrolyte. The surface morphology of porous GaAs has been studied using atomic force …

The present work deals with localized dissolution processes (pit and pore initiation and
growth) of p-and n-type (100) GaAs. Pit and pore growth can be electrochemically initiated …

The electrochemical etching behaviors of GaAs on smooth and textured surfaces were
systematically investigated in aqueous KOH electrolytes. When the applied potential was …

A comparative study of the anodization processes occurring at the GaAs (111) A and GaAs
(111) B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO 3 …

We report on the electrochemical preparation of porous GaAs substrates in fluoride-iodide
aqueous electrolytes for the lattice mismatched epitaxial growth from the vapor phase. The …