The nanometre-scale oxidation characteristics of a p-GaAs (100) surface are investigated by
atomic force microscope (AFM) electrochemical nanolithography with a multiwalled carbon …

Pore growth on n-type GaAs 100 can be initiated in 1 M HCl solution by electrochemical
polarization of the material anodic to a critical potential value—the pore formation potential …

This paper reports the morphological, optical, luminescent and electrical properties of
electrochemically made porous GaAs in order to evaluate their humidity sensing …

We report about chemical, structural and optical characteristics of porous GaAs near-surface
layers formed by low energy and high fluence ion implantation of Si+ and Ge+ ions. The …

Усовершенствован способ фор-мирования пористого арсенида галлия в растворе
соляной кисло-ты. Исследованы основные зако-номерности формирования пори-стых …

Surfaces of p-GaAs (100) electrodes in HCl solution were studied by using an
electrochemical atomic force microscope with atomic resolution. Truncated pyramids of …

Since the first demonstration of light emission from porous Si, a great deal of research has
been focused on understanding the mechanism of light emission and its relationship to …

This paper reports the formation of self-organized nanoporous gallium oxide by anodization
of solid gallium metal. Because of its low melting point (ca. 30° C), metallic gallium can be …

Porous anodic alumina (PAA) templates were prepared via two-step anodization process in
0.3 M oxalic acid for different anodization durations (2–10 h with a step of 2 h). In this article …

The pore height and diameter of the nanoscale structure of porous anodic alumina (PAA)
film produced by the anodization technique are controllable. The structures can be applied …