Electrodeposition of GaAs from aqueous electrolytes

MC Yang, U Landau, JC Angus - Journal of the Electrochemical …, 1992 - iopscience.iop.org
Gallium arsenide films were electrodeposited from both alkaline and acid aqueous
electrolytes. Compared to other conventional methods of preparing gallium arsenide films …

Improvement of nanoscale patterning of heavily doped p-type GaAs by atomic force microscope (AFM)-based surface oxidation process

Y Matsuzaki, A Yamada, M Konagai - Journal of crystal growth, 2000 - Elsevier
An atomic force microscope (AFM) tip-induced direct nano-oxidation method was used to
fabricate nanoscale heavily carbon-doped p-type GaAs oxide wires, where a p++-GaAs …

[引用][C] Selective Etching Characteristics of Peroxide/Ammonium‐Hydroxide Solutions for GaAs/Al0. 16Ga0. 84As

K Kenefick - Journal of the Electrochemical Society, 1982 - iopscience.iop.org
[4] where H2Q, and Q designate hydroquinone and quinone, respectively. The accumulated
charge of opposite sign in the membrane during each reaction is neutralized by electron …

Effects of anodizing conditions on anodic alumina structure

NQ Zhao, XX Jiang, CS Shi, JJ Li, ZG Zhao… - Journal of materials …, 2007 - Springer
In this paper, two-step anodization was used to obtain porous anodic alumina (PAA) films,
which are widely used as the temples to fabricate nanomaterials. Effects of anodizing …

Direct observation of alumina nanowire formation from porous anodic alumina membrane via the droplet etching method

J Kim, YC Choi, KS Chang, SD Bu - Nanotechnology, 2005 - iopscience.iop.org
We report the first direct observation of the formation process of an alumina nanowire (ANW)
array from a porous anodic alumina (PAA) membrane employing a simple droplet etching …

Chemical composition of GaAs oxides grown by local anodic oxidation: a spatially resolved Auger study

M Lazzarino, M Padovani, G Mori, L Sorba… - Chemical physics …, 2005 - Elsevier
The chemistry of the GaAs oxides fabricated by local anodic oxidation (LAO) using an atomic
force microscope is studied by means of spatially resolved Auger electron spectroscopy …

Self-ordered anodic alumina with continuously tunable pore intervals from 410 to 530 nm

C Sun, J Luo, L Wu, J Zhang - ACS applied materials & interfaces, 2010 - ACS Publications
We report a “mild anodization”(MA) process using aluminum oxalate (Alox) as an additive to
suppress breakdown of porous anodic alumina (PAA) in the electrolyte of phosphoric acid at …

A novel method for fabricating self-ordered porous anodic alumina with wide interpore distance using phosphoric/oxalic acid mixed electrolyte

Y Xu, H Liu, X Li, W Kang, B Cheng, X Li - Materials Letters, 2015 - Elsevier
A novel method for fabricating highly ordered porous anodic alumina (PAA) with
continuously tunable interpore distance using phosphoric/oxalic acid mixed electrolyte was …

Electrodeposition of crystalline GaAs on liquid gallium electrodes in aqueous electrolytes

E Fahrenkrug, J Gu, S Maldonado - Journal of the American …, 2013 - ACS Publications
Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As2O3
dissolved in an alkaline aqueous solution at a liquid gallium (Ga (l)) electrode at modest …

Electrochemical pore formation mechanism in III–V crystals (Part I)

VP Ulin, SG Konnikov - Semiconductors, 2007 - Springer
The anodic behavior of III–V crystals in electrolyte solutions was experimentally studied. The
dependences of the pore-formation threshold voltage on the semiconductor composition …