Cross-section imaging and p-type doping assessment of ZnO/ZnO: Sb core-shell nanowires by scanning capacitance microscopy and scanning spreading resistance …

L Wang, V Sallet, C Sartel, G Brémond - Applied Physics Letters, 2016 - pubs.aip.org
ZnO/ZnO: Sb core-shell structured nanowires (NWs) were grown by the metal organic
chemical vapor deposition method where the shell was doped with antimony (Sb) in an …

Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

L Wang, JM Chauveau, R Brenier, V Sallet… - Applied Physics …, 2016 - pubs.aip.org
Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …

Characterization of carrier concentration in ZnO nanowires by scanning capacitance microscopy

L Wang, S Guillemin, JM Chauveau… - … status solidi (c), 2016 - Wiley Online Library
Scanning capacitance microscopy (SCM) has been investigated on Ga doped ZnO staircase
multi‐layers grown by molecular beam epitaxy (MBE) and ZnO NWs grown by chemical bath …

Assessing the electrical activity of individual ZnO nanowires thermally annealed in air

M Bah, TS Tlemcani, S Boubenia, C Justeau… - Nanoscale …, 2022 - pubs.rsc.org
ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications
owing to their tunable electron concentration via structural and surface defect engineering. A …

Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy

L Wang, J Laurent, JM Chauveau, V Sallet… - Applied Physics …, 2015 - pubs.aip.org
Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO
multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly …

An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires

F Wang, JH Seo, D Bayerl, J Shi, H Mi, Z Ma… - …, 2011 - iopscience.iop.org
An aqueous solution-based doping strategy was developed for controlled doping impurity
atoms into a ZnO nanowire (NW) lattice. Through this approach, antimony-doped ZnO NWs …

Effects of Sn doping on the growth morphology and electrical properties of ZnO nanowires

S Kim, S Na, H Jeon, S Kim, B Lee, J Yang… - …, 2013 - iopscience.iop.org
This study examines the effects of doping ZnO nanowires (NWs) with Sn on the growth
morphology and electrical properties. ZnO NWs with various Sn contents (1–3 at.%) were …

Assorted analytical and spectroscopic techniques for the optimization of the defect-related properties in size-controlled ZnO nanowires

KM Wong, Y Fang, A Devaux, L Wen, J Huang… - Nanoscale, 2011 - pubs.rsc.org
In this article, the important role of the intrinsic defects in size-controlled ZnO nanowires
(NWs) which play a critical role in the properties of the NWs, was studied with a combined …

Synthesis and characterization of ZnO/ZnS core/shell nanowires

T Ghrib, M Abdullah Al-Messiere… - Journal of …, 2014 - Wiley Online Library
ZnO nanowires of approximately 3 µm length and 200 nm diameter are prepared and
implanted vertically on substrate glass which is coated with thin layer of ITO which is too …

p-type ZnO nanowire arrays

GD Yuan, WJ Zhang, JS Jie, X Fan, JA Zapien… - Nano Letters, 2008 - ACS Publications
Well-aligned ZnO nanowire (NW) arrays with durable and reproducible p-type conductivity
were synthesized on α-sapphire substrates by using N2O as a dopant source via vapor …