The coupled relationship between carrier and phonon scattering severely limits the
thermoelectric performance of n-type GeTe materials. Here, we provide an efficient strategy …

Because the intrinsic Ge vacancies in GeTe usually lead to high hole concentration beyond
the optimal range, many previous studies tend to consider Ge vacancies as negative effects …

Dense point defects can strengthen phonon scattering to reduce the lattice thermal
conductivity and induce outstanding thermoelectric performance in GeTe‐based materials …

Owing to the moderate energy offset between light and heavy band edges of the rock‐salt
structured GeTe, its figure‐of‐merit (ZT) can be enhanced by the rational manipulation of …

GeTe is a promising mid-temperature thermoelectric compound but inevitably contains
excessive Ge vacancies hindering its performance maximization. This work reveals that …

It is well known that the thermoelectric performance of GeTe is difficult to manipulate due to
its intrinsic overhigh carrier concentration and phase transition. Herein, we demonstrate that …

As an attractive lead-free thermoelectric candidate, GeTe-based materials have been
intensively studied in recent years. However, the ZT value of pristine GeTe is limited around …

Recent vast reinvestigations on GeTe, a promising thermoelectric material at medium
temperature, have triggered enormous enthusiasm in the thermoelectric community again …

As a lead-free material, GeTe has drawn growing attention in thermoelectrics, and a figure of
merit (ZT) close to unity was previously obtained via traditional doping/alloying, largely …

Pristine GeTe shows promising thermoelectric performance but is limited by the high carrier
concentration (n H) from Ge vacancies and thermal conductivity. Herein, Cu/Sb was chosen …