Room-temperature CW operation of all-MOCVD-grown Al 0.3 Ga 0.7 As/GaAs SQW lasers
on Si substrates with Al 0.5 Ga 0.5 As/Al 0.55 Ga 0.45 P intermediate layers has been …

We demonstrate the first room‐temperature low‐threshold continuous‐wave (cw) operation
of Al0. 3Ga0. 7As/GaAs single quantum well (SQW) heterostructure lasers grown by …

Room-temperature cw operation of Al x Ga1− x As/Al y Ga1− y As dh structure visible (760~
780 nm) lasers grown by metalorganic cvd has been achieved. The planar structure lasers …

We report the room-temperature pulsed operation of AlGaAs/GaAs multi-quantum well
(MQW) laser diodes (LD's) fabricated on Si substrates by metallorganic chemical vapor …

Room temperature pulsed operation of 0.67 µm wavelength GaInAsP/AlGaAs lasers on
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …

A low-threshold AlGaAs/GaAs patterned quantum well laser has been fabricated on a V-
grooved GaAs/Si substrate using metal-organic chemical vapor deposition. High-resolution …

The growth behavior of AlGaAs/GaAs/InGaAs structures on non-planar (100) GaAs
substrates has been studied. The structures were grown by atmospheric pressure …

We would like to report on the performance of buried heterostructure (BH) GaAs/Ga 0.65 Al
0.35 As surface emitting (SE) lasers with p-type Ga 0.9 Al 0.1 As/Ga 0.4 Al 0.6 As and SiO …

The heterointerfaces of single quantum wells and the characteristics of single-quantum-well
lasers on Si substrates grown with Al/sub 0.5/Ga/sub 0.5/As-Al/sub 0.55/Ga/sub 0.45/P …

We report the room-temperature pulsed operation of AlGaAs/GaAs multi-quantum well
(MQW) laser diodes (LD's) fabricated on Si substrates by MOCVD. The lowest threshold …