Abstract We fabricated InGaAs nanowires (NWs) in SiO 2 mask openings on a GaAs (111) B
substrate at growth temperatures of 600–700 C using catalyst-free selective-area metal …

GaAs nanowires growth on GaAs (1 1 1) B substrates by Au-assisted MBE with solid As 4
source were investigated as function of group III and V flux, growth time and growth …

We report on the morphological and structural properties of GaAs nanowires nucleated by
self-catalyzed vapor-liquid-solid processes by molecular beam epitaxy on Si-treated GaAs …

Planar GaAs nanowires are epitaxially grown on GaAs substrates of various orientations, via
the Au-catalyzed vapor–liquid–solid mechanism using metal organic chemical vapor …

Self-catalyzed GaAs nanowire growth was obtained by molecular beam epitaxy on GaAs
(001) substrates after predeposition of subnanometer-thick Si layers. Two substrate …

We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic
chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium …

Self-assembled GaAs nanowires were grown by molecular beam epitaxy (MBE) on un-
pretreated Si (111) substrates under different As 4/Ga flux ratios (V/III ratios). It has been …

In this study, we demonstrated that by using annealed Au thin films as catalysts, high-
density, defect-free, and taper-restrained epitaxial GaAs nanowires were grown on GaAs …

Au-catalyzed self-assembly of GaAs nanowires on (1 1 1) B GaAs by metalorganic vapor
phase epitaxy is reported between 375 and 500 C⁠, using tertiarybutylarsine and …

We report on the fabrication of GaAs hexagonal nanowires surrounded by {110} vertical
facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase …