InGaAs Surface Normal Photodiode for 2 Optical Communication Systems
N Ye, H Yang, M Gleeson, N Pavarelli… - IEEE Photonics …, 2015 - ieeexplore.ieee.org
High bandwidth 2-μm wavelength surface normal pin photodiodes using a high indium-
content InGaAs strain-relaxed absorbing layer clad by p-and n-doped AlInGaAs layers are …
content InGaAs strain-relaxed absorbing layer clad by p-and n-doped AlInGaAs layers are …
AlInGaAs surface normal photodiode for 2 µm optical communication systems
N Ye, H Yang, M Gleeson, N Pavarelli… - 2015 IEEE Photonics …, 2015 - ieeexplore.ieee.org
High bandwidth 2 μm wavelength surface normal pin photodiodes using a high indium-
content InGaAs strain-relaxed absorbing layer clad by p and n doped AlInGaAs layers are …
content InGaAs strain-relaxed absorbing layer clad by p and n doped AlInGaAs layers are …
Surface leakage reduction in MSM InGaAs photodetector on III–V CMOS photonics platform
Y Cheng, Y Ikku, M Takenaka… - IEEE Photonics …, 2015 - ieeexplore.ieee.org
By evaluating the leakage current components of Ni/InGaAs Schottky junctions, we have
revealed that the surface leakage current was dominant in the dark current of the waveguide …
revealed that the surface leakage current was dominant in the dark current of the waveguide …
High-speed normal-incidence pin InGaAs photodetectors grown on silicon substrates by MOCVD
Y Gao, Z Zhong, S Feng, Y Geng… - IEEE Photonics …, 2011 - ieeexplore.ieee.org
High-speed normal-incidence pin InGaAs photodetectors epitaxially grown on silicon
substrates by metal-organic chemical vapor deposition has been demonstrated. The InGaAs …
substrates by metal-organic chemical vapor deposition has been demonstrated. The InGaAs …
InP/InGaAs pin photodiode structure maximising bandwidth and efficiency
Y Muramoto, T Ishibashi - Electronics Letters, 2003 - search.proquest.com
A new photodiode design that combines depleted and neutral absorption layers to minimise
carrier travelling delay time for a given total absorption layer thickness is proposed. The …
carrier travelling delay time for a given total absorption layer thickness is proposed. The …
A low dark-current, planar InGaAs pin photodiode with a quaternary InGaAsP cap layer
O Kim, B Dutt, R McCoy, J Zuber - IEEE journal of quantum …, 1985 - ieeexplore.ieee.org
In 0.53 Ga 0.47 As pin photodiodes have become the most suitable photodectectors for long
wavelength (1-1.65\mu m) optical fiber communication systems due to their low dark …
wavelength (1-1.65\mu m) optical fiber communication systems due to their low dark …
High-power V-band InGaAs/InP photodiodes
InGaAs/InP-modified uni-traveling carrier photodiodes with cliff layer were designed and
fabricated for V-band (50-75 GHz) applications. The devices were flip-chip bonded on AlN …
fabricated for V-band (50-75 GHz) applications. The devices were flip-chip bonded on AlN …
Responsibility optimization of a high-speed InP/InGaAs photodetector with a back reflector structure
Y Wang, G Li, X Gu, Y Kong, Y Zheng, Y Shi - Optics Express, 2022 - opg.optica.org
Top-illuminated PIN photodetectors (PDs) are widely utilized in telecommunication systems,
and more efforts have been focused on optimizing the optical responsibility and bandwidth …
and more efforts have been focused on optimizing the optical responsibility and bandwidth …
InGaAs PIN photodiodes on semi-insulating InP substrates with bandwidth exceeding 14 GHz
WJ Ho, TA Dai, ZM Chuang, W Lin, YK Tu, MC Wu - Solid-state electronics, 1995 - Elsevier
The top-illuminated InGaAs PIN photodiodes have been fabricated from materials grown by
metalorganic vapor phase epitaxy. Using the planar air-bridge approach and the selective …
metalorganic vapor phase epitaxy. Using the planar air-bridge approach and the selective …
High-speed, high-efficiency, large-area pin photodiode for application to optical interconnects from 0.85 to 1.55 μm wavelengths
JW Shi, YH Cheng, JM Wun, KL Chi… - Journal of Lightwave …, 2013 - opg.optica.org
We demonstrate a novel InP-based photodiode structure with large active diameter (55 μm)
for> 25 Gbit/s operation at optical wavelengths which range from 0.85 to 1.55 μm. By utilizing …
for> 25 Gbit/s operation at optical wavelengths which range from 0.85 to 1.55 μm. By utilizing …