Optical interconnects are promising approaches for future short-distance communications
because electrical interconnects show severe limitations in terms of bandwidth and energy …

High-speed metamorphic double heterojunction photodiodes were fabricated on GaAs
substrates for long-wavelength optical fiber communications. The high quality linearly …

InGaAs photodiodes having diameters of 500 µm have been successfully fabricated by
vapor-phase epitaxial techniques. Typical room-temperature performance characteristics at …

An edge‐coupled high‐speed photodiode based on strained InGaAs quantum wells for
detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low …

A 512-element InGaAs photodetector array with low leakage, usable optical response from
600 to 1700 nm, and an element separation of 4.5 mu m was developed. Electrical …

The responsivity and the bandwidth of metal-semiconductor-metal photodetectors
(MSMPD's) with different InGaAs absorption layer thicknesses and electrode geometries …

We design lattice matched InP/In 0.53 Ga 0.47 As mesa structured heterojunction pn
photodiodes with a novel passivation methodology based on a fully depleted thin p-InP …

We demonstrated a small footprint of 2× 10 μm 2 InGaAs MSM photodetector integrated on
Si waveguide with high-efficiency and low dark current property. The detectors have …

A partially depleted absorber photodiode with graded absorption injection regions is
reported. The 880-nm-thick In/sub 0.53/Ga/sub 0.47/As absorption region consists of a …

An InGaAs/InP photodiode with 600 mW RF output power Page 1 An InGaAs/InP Photodiode
with 600mW RF Output Power Ning Duan, Ning Li, Stephane Demiguel, Joe C. Campbell …