This study describes the effect of a thin GaAs spacer of 4.5 nm thickness in a bilayer-coupled
InAs quantum dot (QD) heterostructure. Here, we report the first demonstration of InAs/GaAs …

We have investigated optical and structural properties of three-stacked InGaAs quantum dot
(QD) structure with GaAs spacer thicknesses of 22, 35, and 88 nm (denoted by QD22, QD35 …

The growth of five layers of InAs quantum dots embedded in GaAs matrices was investigated
by in situ synchrotron X-ray diffraction. Time-resolved X-ray diffraction revealed the evolution …

In this study, the quantum dots (QDs) self-assembly properties were affected by strain
modulation. The strain of the GaAs (100) surface was modulated prior to the growth of InAs …

Self-assembled InAs quantum dots (QDs) covered by an In0. 15Ga0. 85As layer with two
different thicknesses were, respectively, grown on GaAs (001) substrates by a solid-source …

Strain-coupled Bilayer quantum dot (QD) heterostructures have taken over single layer QD
structures due to their longer wavelength emission, homogeneity in dot size distribution and …

The effects of a thin gallium-rich In x Ga 1− x As cap layer on the electronic properties of self-
organized InAs quantum dots (QD's) are investigated both experimentally and theoretically …

Strain coupled multi-layer quantum dot (QD) structures are limited due to their non-uniform
dot size distribution, as-grown defects and dislocations. Even with these limitations, they are …

We investigated the effect of rapid thermal annealing from 700° C to 950° C on stacked
InAs/GaAs quantum dots (QDs) covered with GaAs and In0. 19Ga0. 81As layers. Large blue …

We report the strain compensation (SC) technique for a stacked InAs/GaAs self-assembled
quantum dot (QD) structure grown by metalorganic chemical vapour deposition (MOCVD) …