Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
RD Dupuis, PD Dapkus - Applied Physics Letters, 1978 - pubs.aip.org
Room‐temperature Ga (1− x) Al x As‐GaAs DH lasers with very low threshold current
densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices …
densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices …
Very low current threshold GaAs‐AlxGa1− xAs double‐heterostructure lasers grown by molecular beam epitaxy
WT Tsang, FK Reinhart, JA Ditzenberger - Applied Physics Letters, 1980 - pubs.aip.org
GaAs-AI, Gal_ xAs (x= 0.3) double-heterostructure (DH) lasers having very low current
threshold densities have been prepared by molecular beam epitaxy (MBE). For DH lasers …
threshold densities have been prepared by molecular beam epitaxy (MBE). For DH lasers …
Room‐temperature operation of Ga (1− x) AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
RD Dupuis, PD Dapkus - Applied Physics Letters, 1977 - pubs.aip.org
Room-temperature pulsed laser operation of Ga (l_x) AlxAs/GaAs double-heterostructure
lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved …
lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved …
Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition
RD Dupuis, PD Dapkus - Applied Physics Letters, 1977 - pubs.aip.org
Room‐temperature operation of Ga (1− x) Al x As/Ga (1− y) Al y As double‐heterostructure
lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved …
lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved …
Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy
WT Tsang - Journal of Applied Physics, 1980 - pubs.aip.org
Room‐temperature low‐current‐threshold broad‐area Fabry‐Perot Al x Ga1− x As/Al y
Ga1− y As double‐heterostructure (DH) lasers have been prepared by molecular‐beam …
Ga1− y As double‐heterostructure (DH) lasers have been prepared by molecular‐beam …
Very low current threshold GaAs/Al0.5Ga0.5As double‐heterostructure lasers grown by chemical beam epitaxy
WT Tsang - Applied physics letters, 1986 - pubs.aip.org
The first device performance of GaAs/Al x Ga1− x As double‐heterostructure lasers grown by
chemical beam epitaxy (CBE) is reported. Very low averaged current threshold densities …
chemical beam epitaxy (CBE) is reported. Very low averaged current threshold densities …
Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
R Dupuis, PD Dapkus - IEEE Journal of Quantum Electronics, 1979 - ieeexplore.ieee.org
Recently Ga 1-x Al x As-GaAs double-heterostructure lasers having low threshold current
densities have been grown by metalorganic chemical vapor deposition. In addition to these …
densities have been grown by metalorganic chemical vapor deposition. In addition to these …
Room‐temperature laser operation of quantum‐well Ga (1− x) AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition
RD Dupuis, PD Dapkus, N Holonyak, EA Rezek… - Applied Physics …, 1978 - pubs.aip.org
The achievement of room-temperature (3000 K) operation of Ga (l_x) AlxAs-GaAs double-
heterostructure lasers with active layers of quantum-well dimensions-200 A thick is reported …
heterostructure lasers with active layers of quantum-well dimensions-200 A thick is reported …
700‐h continuous room‐temperature operation of AlxGa1− xAs‐GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
RD Dupuis - Applied Physics Letters, 1979 - pubs.aip.org
Constant-current continuous room-temperature (-26 C) operating times greater than 700 h
have been achieved for Alx Gal _ x As-GaAs multiple-quantum-well heterostructure injection …
have been achieved for Alx Gal _ x As-GaAs multiple-quantum-well heterostructure injection …
GaAs–Alx Ga1− x As double‐heterostructure lasers prepared by molecular‐beam epitaxy
AY Cho, HC Casey - Applied Physics Letters, 1974 - pubs.aip.org
GaAs-AlxGa'_xAs double-heterostructure (DH) lasers that exhibit laser properties similar to
DH lasers prepared by liquid-phase epitaxy have been prepared by molecular-beam …
DH lasers prepared by liquid-phase epitaxy have been prepared by molecular-beam …