In this work, the authors demonstrate the potential of epitaxially grown highly doped InSb as
an engineered, wavelength-flexible mid-IR plasmonic material. The authors achieve doping …

The authors demonstrate the ability of high-quality epitaxial InAs films to be used as
wavelength-flexible, low-loss, engineered plasmonic metals across the mid-infrared spectral …

We demonstrate the potential of highly-doped semiconductor epilayers as building blocks
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …

In the past decade or two, the field of nanophotonics has seen rapid development,
empowered by introducing the concepts of plasmonics and metamaterials. The enabling …

The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has
been recently proposed as a promising way to obtain high-quality and tunable plasmonic …

Doping-tunable mid-infrared extraordinary transmission is demonstrated from a periodic
metal hole array patterned on n-InSb. The polarization-dependent transmission was …

We demonstrate lateral control of carrier concentration in doped Si for mid-infrared
plasmonic applications. Using commercially available spin-dopants, we show that doped …

Heavily doped semiconductor thin films are very promising for application in mid-infrared
plasmonic devices because the real part of their dielectric function is negative and broadly …

Plasmonic behavior in the far-infrared (IR) and terahertz (THz) ranges can facilitate a lot of
applications in communication, imaging or sensing, security, and biomedical domains …

Highly doped semiconductors are an emerging platform for plasmonic devices. Unlike in
noble metals, the carrier concentration of semiconductors can vary by many orders of …